TISP9110LDM
INTEGRATED COMPLEMENTARY BUFFERED-GATE SCRS
FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION
*RoHS COMPLIANT
TISP9110LDM Overvoltage Protector
High Performance Protection for SLICs with +ve and -ve
Battery Supplies
8-SOIC (210 mil) Package (Top View)
– Wide -110 V to +110 V Programming Range
– Low 5 mA max. Gate Triggering Current
– Dynamic Protection Performance Specified for
International Surge Waveshapes
NC
1
2
3
4
8
7
6
5
(Tip or Ring) Line
Ground
Ground
NC
(-V(BAT)
)
G1
G2
(+V(BAT)
)
Applications include:
– Wireless Local Loop
– Access Equipment
– Regenerated POTS
– VOIP Applications
(Ring or Tip) Line
NC - No internal connection
Terminal typical application names shown in
parenthesis
MD-8SOIC(210)-003-a
Rated for International Surge Wave Shapes
IPPSM
A
Device Symbol
Wave Shape
Standard
2/10
GR-1089-CORE
ITU-T K.20/21/45
GR-1089-CORE
100
45
Line
10/700
10/1000
30
............................................... UL Recognized Component
Description
G1
G2
The TISP9110LDM is a programmable overvoltage protection
device designed to protect modern dual polarity supply rail
ringing SLICs (Subscriber Line Interface Circuits) against
overvoltages on the telephone line. Overvoltages can be caused
by lightning, a.c. power contact and induction. Four separate
protection structures are used; two positive and two negative to
provide optimum protection during Metallic (Differential) and
Longitudinal (Common Mode) protection conditions in both
polarities. Dynamic protection performance is specified under
typical international surge waveforms from Telcordia GR-1089-
CORE, ITU-T K.44 and YD/T 950.
Ground
Line
SD-TISP9-001-a
The TISP9110LDM is programmed by connecting the G1 and G2
gate terminals to the negative (-V
) and positive (+V
)
(BAT)
(BAT)
SLIC Battery supplies respectively. This creates a protector operating at typically +1.4 V above +V
and -1.4 V below -V
under a.c.
(BAT)
(BAT)
power induction and power contact conditions. The protector gate circuitry incorporates 4 separate buffer transistors designed to provide
independent control for each protection element. The gate buffer transistors minimize supply regulation issues by reducing the gate current
drawn to around 5 mA, while the high voltage base emitter structures eliminate the need for expensive reverse bias protection gate diodes.
The TISP9110LDM is rated for common surges contained in regulatory requirements such as ITU-T K.20, K.45, Telcordia GR-1089-CORE,
®
®
™
YD/T 950. By the use of appropriate overcurrent protection devices such as the Bourns Multifuse and Telefuse devices, circuits can be
designed to comply with modern telecom standards.
How To Order
Device
Package
Carrier
Marking Code
Standard Quantity
Order As
TISP9110LDM
8-SOIC (210 mil)
Embossed Tape Reeled
TISP9110LDMR-S
9110L
2000
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
AUGUST 2004 – REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.