Datasheet > TISP93121DR

TISP93121DR

更新时间： 2024-11-06 20:58:03

品牌	Logo	应用领域
伯恩斯 - BOURNS		光电二极管
页数	文件大小	规格书
7页	134K
描述
Silicon Controlled Switch, PLASTIC, SO-8

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技术参数
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TISP93121DR 技术参数

生命周期：	Obsolete	零件包装代码：	SOIC
包装说明：	SMALL OUTLINE, R-PDSO-G8	针数：	8
Reach Compliance Code：	unknown	HTS代码：	8541.30.00.80
风险等级：	5.6	JESD-30 代码：	R-PDSO-G8
端子数量：	8	最高工作温度：	150 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
触发设备类型：	SILICON CONTROLLED SWITCH	Base Number Matches：	1

TISP93121DR 数据手册

TISP83121D

DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR

FEBRUARY 1999

OVERVOLTAGE PROTECTION FOR DUAL-VOLTAGE RINGING SLICS

●

Programmable Protection Configurations up

to ±100 V

D PACKAGE

(TOP VIEW)

Typically 5 Lines Protected by Two

TISP83121D + Diode Steering Networks

High Surge Current

- 150 A 10/1000 µs

- 150 A 10/700 µs

- 500 A 8/20 µs

MD6XAYA

For operation at the rated current values connect

pins 1, 4, 5 and 8 together.

●

Pin compatible with the LCP3121

- Functional Replacement in Diode Steering

Network Applications

device symbol

- 50% more surge current

Small Outline Surface Mount Package

- Available Ordering Options

CARRIER

Tube

PART #

TISP83121D

TISP83121DR

Taped and reeled

description

The TISP83121D is a dual-gate reverse-blocking

unidirectional thyristor designed for the

protection of dual-voltage ringing SLICs

(Subscriber Line Interface Circuits) against

overvoltages on the telephone line caused by

lightning, a.c. power contact and induction.

SD6XAKA

supply from being shorted when the

TISP83121D crowbars.

Under low level power cross conditions the

TISP83121D gate current will charge the gate

reference supply. If the reference supply cannot

absorb the charging current its potential will

increase, possibly to damaging levels. To avoid

excessive voltage levels a clamp (zener or

avalanche breakdown diode) may be added in

shunt with the supply. Alternatively, a grounded

collector emitter-follower may be used to reduce

the charging current by the transistors H_FEvalue.

The device chip is a four-layer NPNP silicon

thyristor structure which has an electrode

connection to every layer. For negative

overvoltage protection the TISP83121D is used

in a common anode configuration with the

voltage to be limited applied to the cathode (K)

terminal and the negative reference potential

applied to the gate 1 (G1) terminal. For positive

overvoltage protection the TISP83121D is used

in a common cathode configuration with the

voltage to be limited applied to the anode (A)

terminal and the positive reference potential

applied to the gate 2 (G2) terminal.

This monolithic protection device is made with a

ion-implanted epitaxial-planar technology to give

a consistent protection performance and be

virtually transparent to the system in normal

operation.

The TISP83121D is a unidirectional protector

and to prevent reverse bias, requires the use of a

series diode between the protected line

conductor and the protector. Further, the gate

reference

supply

voltage

requires

appropriately poled series diode to prevent the

P R O D U C T I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7

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与TISP93121DR相关器件

型号	品牌	获取价格	描述	数据表
TISPL758LF3D	POINN	获取价格	INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TE
TISPL758LF3D	BOURNS	获取价格	INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS
TISPL758LF3D_07	BOURNS	获取价格	INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS
TISPL758LF3DR	POINN	获取价格	INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TE
TISPL758LF3DR-S	BOURNS	获取价格	Silicon Surge Protector, 130V V(BO) Max, 20A, ROHS COMPLIANT PACKAGE-8
TISPL758LF3D-S	BOURNS	获取价格	INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS
TISPPBL1D	POINN	获取价格	DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS
TISPPBL1D	BOURNS	获取价格	DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS
TISPPBL1D	TI	获取价格	TELECOM, SURGE PROTECTION CIRCUIT, PDSO8, PLASTIC, SO-8
TISPPBL1DR	BOURNS	获取价格	Surge Protection Circuit, PDSO8, PLASTIC, MS-012, SOP-8

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