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TISP83121DR-S

更新时间： 2024-11-09 21:17:39
品牌 Logo 应用领域
伯恩斯 - BOURNS 光电二极管
页数 文件大小 规格书
5页 382K
描述
Silicon Surge Protector, 22A, ROHS COMPLIANT, SOIC-8

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中文翻译

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TISP83121DR-S 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：SMALL OUTLINE, R-PDSO-G8针数：8
Reach Compliance Code：compliantHTS代码：8541.30.00.80
风险等级：1.79其他特性：UL RECOGNIZED
配置：SINGLE最大断态直流电压：100 V
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
湿度敏感等级：1通态非重复峰值电流：22 A
元件数量：1端子数量：8
最高工作温度：150 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

TISP83121DR-S 数据手册

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T
TISP83121D  
N
A
I
L
P
M
O
C
S
H
o
R
*
DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR  
TISP83121D Unidirectional P & N-Gate Protector  
Overvoltage Protection for Dual-Voltage Ringing SLICs  
– Programmable Protection Configurations up to ±100 V  
– Typically 5 Lines Protected by:  
8-SOIC Package (Top View)  
Two TISP83121D + Diode Steering Networks  
1
8
7
6
5
K
A
A
K
K
2
3
4
G1  
G2  
K
High Surge Current  
– 150 A, 10/1000 µs  
– 250 A, 10/700 µs  
– 500 A, 8/20 µs  
MD6XAYB  
Pin Compatible with the LCP3121  
– 50 % more surge current  
– Functional Replacement in Diode Steering Applications  
For operation at the rated current values connect pins 1, 4, 5  
and 8 together.  
Small Outline Surface Mount Package  
Device Symbol  
A
Description  
The TISP83121D is a dual-gate reverse-blocking unidirectional  
thyristor designed for the protection of dual-voltage ringing SLICs  
(Subscriber Line Interface Circuits) against overvoltages on the  
telephone line caused by lightning, a.c. power contact and  
induction.  
G2  
The device chip is a four-layer NPNP silicon thyristor structure  
which has an electrode connection to every layer. For negative  
overvoltage protection the TISP83121D is used in a common anode  
configuration with the voltage to be limited applied to the cathode  
(K) terminal and the negative reference potential applied to the gate  
1 (G1) terminal. For positive overvoltage protection the TISP83121D  
is used in a common cathode configuration with the voltage to be  
limited applied to the anode (A) terminal and the positive reference  
potential applied to the gate 2 (G2) terminal.  
G1  
K
SD6XAKA  
............................................... UL Recognized Component  
The TISP83121D is a unidirectional protector and to prevent reverse bias, requires the use of a series diode between the protected line  
conductor and the protector. Further, the gate reference supply voltage requires an appropriately poled series diode to prevent the supply from  
being shorted when the TISP83121D crowbars.  
Under low level power cross conditions the TISP83121D gate current will charge the gate reference supply. If the reference supply cannot  
absorb the charging current its potential will increase, possibly to damaging levels. To avoid excessive voltage levels a clamp (zener or  
avalanche breakdown diode) may be added in shunt with the supply. Alternatively, a grounded collector emitter-follower may be used to  
reduce the charging current by the transistor’s HFE value.  
This monolithic protection device is made with an ion-implanted epitaxial-planar technology to give a consistent protection performance and  
be virtually transparent to the system in normal operation.  
How To Order  
Order As  
R (Embossed Tape Reeled) TISP83121DR-S  
Device  
Package  
Carrier  
TISP83121 D (8-pin Small-Outline)  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
FEBRUARY 1999 – REVISED JULY 2008  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
12345

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TISP83121DR-S 替代型号

型号 品牌 替代类型 描述 数据表
TISP83121D-S BOURNS

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