Datasheet > TISP8211MD

TISP8211MD

更新时间： 2024-11-05 08:48:27

品牌	Logo	应用领域
伯恩斯 - BOURNS		/
页数	文件大小	规格书
6页	413K
描述
COMPLEMENTARY BUFFERED-GATE SCRS

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中文翻译

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数据手册

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TISP8211MD 数据手册

TISP8210MD BUFFERED P-GATE SCR DUAL

TISP8211MD BUFFERED N-GATE SCR DUAL

COMPLEMENTARY BUFFERED-GATE SCRS

FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION

TISP821xMD Overvoltage Protectors

High Performance Protection for SLICs with +ve & -ve

Battery Supplies

TISP8210MD 8-SOIC Package (Top View)

TISP8210MD Negative Overvoltage Protector

– Wide 0 to -110 V Programming Range

– Low +5 mA Max. Gate Triggering Current

– High -150 mA Min. Holding Current

MDRXAKC

TISP8211MD Positive Overvoltage Protector

– Wide 0 to +110 V Programming Range

– Low -5 mA Max. Gate Triggering Current

– +20 mA Min. Holding Current

NC - No internal connection

TISP8210MD Device Symbol

Rated for International Surge Wave Shapes

I_PPSM

Wave Shape

Standard

2/10

GR-1089-CORE

ITU-T K.20/21/45

GR-1089-CORE

167

10/700

10/1000

..................................................UL Recognized Component

SDRXAJB

Circuit Application Diagram

TISP8211MD 8-SOIC Package (Top View)

SLIC

PROTECTION

Tip

100 nF

MDRXALC

NC - No internal connection

100 nF

TISP8211MD Device Symbol

Ring

TISP8210MD TISP8211MD

+V_BAT

- V_BAT

AI-TISP8-003-a

SDRXAKB

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

JANUARY 2006 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

12 3 4 5 6

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