Datasheet > TISP8201HDM

TISP8201HDM

更新时间： 2024-09-15 01:18:19

品牌	Logo	应用领域
伯恩斯 - BOURNS		/
页数	文件大小	规格书
7页	481K
描述
COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION

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中文翻译

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数据手册

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TISP8201HDM 数据手册

TISP8200HDM BUFFERED P-GATE SCR DUAL

TISP8201HDM BUFFERED N-GATE SCR DUAL

COMPLEMENTARY BUFFERED-GATE SCRS

FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION

TISP820xHDM Overvoltage Protectors

High Performance Protection for SLICs with +ve & -ve

Battery Supplies

TISP8200HDM 8-SOIC (210 mil) Package (Top View)

(Tip)

TISP8200HDM Negative Overvoltage Protector

– Wide -20 to -110 V Programming Range

– Low +15 mA Max. Gate Triggering Current

– High -150 mA Min. Holding Current

(-V_(BAT)

)

(Ground)

(Ring)

TISP8201HDM Positive Overvoltage Protector

– Wide +20 to +110 V Programming Range

– Low -15 mA Max. Gate Triggering Current

– +20 mA Min. Holding Current

NC - No internal connection

Terminal typical application names shown in parenthesis

MD-8SOIC(210)-007-a

Rated for International Surge Wave Shapes

TISP8200HDM Device Symbol

K1 K1

I_PPSM

Wave Shape

Standard

2/10

GR-1089-CORE

ITU-T K.20/21/45

GR-1089-CORE

500

150

100

10/700

10/1000

..................................................UL Recognized Component

Circuit Application Diagram

SD-TISP8-001-a

K2 K2

SLIC

PROTECTION

TISP8201HDM 8-SOIC (210 mil) Package (Top View)

Tip

(Tip)

220 nF

(+V_(BAT)

)

(Ground)

(Ring)

220 nF

NC - No internal connection

Terminal typical application names shown in parenthesis

MD-8SOIC(210)-008-a

TISP8201HDM Device Symbol

Ring

TISP8200HDM TISP8201HDM

+V_BAT

A1 A1

- V_BAT

AI-TISP8-002-b

SD-TISP8-002-a

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

OCTOBER 2005 — REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

12 3 4 5 6 7

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