Datasheet > TF408-2-TL-H

TF408-2-TL-H

更新时间： 2024-09-14 01:15:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	320K
描述
N-Channel JFET

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数据手册

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TF408-2-TL-H 数据手册

Ordering number : ENA2008A

TF408

N-Channel JFET

30V, 0.6 to 3.0mA, 5.0mS, USFP

http://onsemi.com

Applications

•

Low-Frequency general-purpose ampliﬁer, impedance conversion, infrared sensor applications

Features

•

Ultrasmall package facilitates miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm)

Small I : max --1.0nA (V = --20V, V =0V)

GSS GS DS

Small Ciss : typ 4pF (V = 10V, V =0V, f=1MHz)

Halogen free compliance

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Drain Voltage

Gate Current

Symbol

Conditions

Ratings

Unit

--30

DSX

GDS

Drain Current

Allowable Power Dissipation

Junction Temperature

Storage Temperature

150

Tstg

--55 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Product & Package Information

Package Dimensions

unit : mm (typ)

• Package

: USFP

7055-003

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 10,000 pcs./reel

TF408-2-TL-H

TF408-3-TL-H

0.6

Packing Type: TL

Marking

0.11

0.2

0 to 0.02

0.15

0.175

Electrical Connection

1 : Source

2 : Drain

3 : Gate

1 : Source

2 : Drain

3 : Gate

USFP

Top view

Semiconductor Components Industries, LLC, 2013

August, 2013

53012 TKIM/22912GB TKIM TC-00002704 No. A2008-1/6

12 3 4 5 6

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