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TF410 PDF预览

TF410

更新时间: 2024-11-26 08:49:55
品牌 Logo 应用领域
三洋 - SANYO 转换器传感器红外传感器
页数 文件大小 规格书
3页 314K
描述
N-Channel Silicon Junction FET Impedance Converter, Infrared Sensor Applications

TF410 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code:unknown风险等级:5.76
配置:SINGLE最小漏源击穿电压:40 V
最大漏极电流 (ID):0.001 AFET 技术:JUNCTION
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TF410 数据手册

 浏览型号TF410的Datasheet PDF文件第2页浏览型号TF410的Datasheet PDF文件第3页 
Ordering number : ENA2007  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon Junction FET  
Impedance Converter,  
Infrared Sensor Applications  
TF410  
Applications  
Impedance conversion, infrared sensor applications  
Features  
Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm)  
Small I : max --500pA (V = --20V, V =0V)  
GSS GSS DS  
Small Ciss : typ. 0.7pF (V = 10V, V =0V, f=1MHz)  
DS GS  
Halogen free compliance  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Drain Voltage  
Gate Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
40  
--40  
10  
DSS  
V
V
GDS  
I
mA  
mA  
mW  
G
Drain Current  
I
1
D
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
30  
D
Tj  
150  
C
C
°
Tstg  
--55 to +150  
°
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: USFP  
7055-003  
• JEITA, JEDEC  
: -  
• Minimum Packing Quantity : 10,000 pcs./reel  
0.6  
0.11  
0.2  
Packing Type: TL  
Marking  
3
3
0 to 0.02  
TL  
1
2
B
0.15  
0.175  
1
2
Electrical Connection  
3
1
2
1 : Source  
2 : Drain  
3 : Gate  
1 : Source  
2 : Drain  
3 : Gate  
3
SANYO : USFP  
Top view  
1
2
http://semicon.sanyo.com/en/network  
No. A2007-1/3  
22912GB TKIM TC-00002703  

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