Datasheet > TF410-TL-H

TF410-TL-H

更新时间： 2024-10-30 21:19:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	312K
描述
N-Channel JFET, 40V, 50 to 130µA, 0.11mS, USFP, SOT-1123 / USFP, 10000-REEL

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技术参数
数据手册

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TF410-TL-H 技术参数

是否无铅：	不含铅	生命周期：	Lifetime Buy
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.76
JESD-609代码：	e6	湿度敏感等级：	1
端子面层：	Tin/Bismuth (Sn/Bi)	Base Number Matches：	1

TF410-TL-H 数据手册

Ordering number : ENA2007A

TF410

N-Channel JFET

http://onsemi.com

40V, 50 to 130 A, 0.11mS, USFP

Applications

•

Impedance conversion, infrared sensor applications

Features

•

Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm)

•

Small I

GSS

: max --500pA (V

GSS

= --20V, V =0V)

Small Ciss : typ. 0.7pF (V = 10V, V =0V, f=1MHz)

Halogen free compliance

DS GS

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Drain Voltage

Gate Current

Symbol

Conditions

Ratings

Unit

--40

DSS

GDS

Drain Current

Allowable Power Dissipation

Junction Temperature

Storage Temperature

150

Tstg

--55 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Product & Package Information

Package Dimensions

unit : mm (typ)

• Package

: USFP

• JEITA, JEDEC

: -

7055-003

• Minimum Packing Quantity : 10,000 pcs./reel

TF410-TL-H

0.6

Packing Type: TL

Marking

0.11

0.2

0 to 0.02

0.15

0.175

Electrical Connection

1 : Source

2 : Drain

3 : Gate

1 : Source

2 : Drain

3 : Gate

USFP

Top view

Semiconductor Components Industries, LLC, 2013

August, 2013

53012 TKIM/22912GB TKIM TC-00002703 No. A2007-1/6

12 3 4 5 6

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