Datasheet > TF412ST5G

TF412ST5G

更新时间： 2024-09-14 11:15:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	282K
描述
N 沟道 JFET，30 V，1.2 至 3.0 mA，5.0 mS，SOT-883

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中文翻译

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数据手册

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TF412ST5G 数据手册

N-Channel JFET 30 V,

1.2 to 3.0 mA, 5.0 mS, SOT-883

TF412S

Features

• Small IGSS: Max −1.0 nA (V = −20 V, V = 0 V)

www.onsemi.com

• Small Ciss: Typ 4 pF (V = 10 V, V = 0 V, f = 1 MHz)

• Ultrasmall Package Facilitates Miniaturization in End Products

• This is a Pb−Free and Halogen Free Device

ELETRICAL CONNECTION

Applications

1: Source

2: Drain

3: Gate

• Low−Frequency General−purpose Amplifier, Impedance Conversion,

Infrared Sensor Applications

Top View

Specifications

ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C)

Symbol

Parameter

Drain−to−Source Voltage

Gate−to−Drain Voltage

Gate Current

Value

Unit

DSX

GDS

−30

SOT−883 (XDFN3)

CASE 506CB

°C

Drain Current

MARKING DIAGRAM

Power Dissipation

100

Junction Temperature

Storage Temperature

150

A2 M

Tstg

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

NOTE: This product is designed to “ESD immunity < 200 V*”, so

please take care when handling.

= Specific Device Code

= Date Code

ORDERING INFORMATION

* Machine Model

†

Device

TF412ST5G

Package

Shipping

SOT−883

8.000 Tape / Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

April, 2021 − Rev. 2

TF412S/D

12 3 4 5 6

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