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TF408-3-TL-H PDF预览

TF408-3-TL-H

更新时间: 2024-10-31 01:15:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 320K
描述
N-Channel JFET

TF408-3-TL-H 数据手册

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Ordering number : ENA2008A  
TF408  
N-Channel JFET  
30V, 0.6 to 3.0mA, 5.0mS, USFP  
http://onsemi.com  
Applications  
Low-Frequency general-purpose amplier, impedance conversion, infrared sensor applications  
Features  
Ultrasmall package facilitates miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm)  
Small I : max --1.0nA (V = --20V, V =0V)  
GSS GS DS  
Small Ciss : typ 4pF (V = 10V, V =0V, f=1MHz)  
DS  
Halogen free compliance  
GS  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Drain Voltage  
Gate Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
30  
--30  
10  
DSX  
V
V
GDS  
I
mA  
mA  
mW  
G
Drain Current  
I
10  
D
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
30  
D
Tj  
150  
C
C
°
°
Tstg  
--55 to +150  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Product & Package Information  
Package Dimensions  
unit : mm (typ)  
• Package  
: USFP  
7055-003  
• JEITA, JEDEC  
: -  
• Minimum Packing Quantity : 10,000 pcs./reel  
TF408-2-TL-H  
TF408-3-TL-H  
0.6  
Packing Type: TL  
Marking  
0.11  
0.2  
3
3
0 to 0.02  
TL  
A
1
2
0.15  
0.175  
1
2
Electrical Connection  
3
1
2
1 : Source  
2 : Drain  
3 : Gate  
1 : Source  
2 : Drain  
3 : Gate  
3
USFP  
Top view  
1
2
Semiconductor Components Industries, LLC, 2013  
August, 2013  
53012 TKIM/22912GB TKIM TC-00002704 No. A2008-1/6  

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