Datasheet > TBL350P04-S8

TBL350P04-S8

更新时间： 2024-04-09 18:59:34

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	411K
描述
-40V, P Channel MOSFETs

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TBL350P04-S8 数据手册

P-Channel Enhancement Mode MOSFET

TBL350P04-S8

Electrical Characteristics (@ T_A= 25°C unless otherwise specified)

Symbol

Parameter

Test Condition

Min. Typ. Max. Unit

Static Characteristics

V_DSS

I_DSS

I_GSS

Drain-Source Breakdown Voltage

V_GS= 0V, I_D= -250μA

V_DS= -40V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

-40

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

-1

μA

±1 00

On Characteristics

R_DS(ON)

Drain-Source On-resistance ^*2

V_GS= -10V,I_D= -5A

V_GS= -4.5V,I_D= -3A

V_DS= V_GS, I_D= -250μA

mΩ

V_GS(th)

Gate Threshold Voltage

-1.0

-2.5

Dynamic Characteristics

C_ISS

C_OSS

C_RSS

Input Capacitance

1350

123

V_GS= 0V

Output Capacitance

V_DS= -20V

f = 1.0MHz

Reverse Transfer Capacitance

105

Switching Characteristics

t_d(ON)

t_r

t_d(OFF)

t_f

Turn-on Delay Time ^*4

Turn-on Rise Time ^*4

Turn-Off Delay Time ^*4

Turn-Off Fall Time ^*4

Total Gate-Charge

V_DD= -20V

V_GS= -10V

R_G= 25Ω

I_D= -5A

Q_G

3.5

4.2

V_DD= -20V

I_D= -5A

Q_GS

Q_GD

Gate to Source Charge

Gate to Drain (Miller) Charge

V_GS= -10V

Source-Drain Diode Characteristics

V_SD

trr

Diode Forward Voltage ^*2

Reverse Recovery Time

Reverse Recovery Charge

I_SD= -5A, V_GS= 0V

-1.2

I_S= -5A, V_GS= 0V

di/dt=100A/μs

Q_rr

Notes:

1、 The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper

2、 The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%

3、 The E_ASdata shows Max. rating. The test condition is V_DD= -20V, V_GS= -10V, L = 0.5mH

4、 Guaranteed by design, not subject to production testing

MTM1373A: August 2023 [P]

www.gmesemi.com

123 4 5

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