Datasheet > TBL4P06-6L

TBL4P06-6L

更新时间： 2024-11-19 17:01:31

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	707K
描述
4A, 60V, 1.6W, P Channel, MOSFETs

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数据手册

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TBL4P06-6L 数据手册

P-Channel Enhancement Mode MOSFET

TBL4P06-6L

Features



R_DS(ON)< 90mΩ @ V_GS= 10V

High density cell design for ultralow R_DS(ON)

Fully characterized avalanche voltage and current

Excellent package for good heat dissipation

JESD22-A114-B ESD rating of class 1C per human body model

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

Mechanical Data



Case: SOT-23-6L

SOT-23-6L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

SOT-23-6L

Shipping Quantity

Marking Code

TBL4P06-6L

3000 pcs / Tape & Reel

4P06

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-60

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 70°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*4

Power Dissipation (T_A= 25°C)

-4

I_D

-3.1

-2.5

I_DM

E_AS

P_D

-20

°C

1.6

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

MTM0355A: August 2023 [2.3]

www.gmesemi.com

12 3 4 5 6

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