Datasheet > TBL450P04D

TBL450P04D

更新时间： 2024-11-19 17:01:31

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	545K
描述
23A, 40V, 2.5W, P Channel, Power MOSFETs

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数据手册

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TBL450P04D 数据手册

P-Channel Enhancement Mode MOSFET

TBL450P04D

Features



Super low gate charge

100% E_ASguaranteed

Excellent C_dV/d_teffect decline

Advanced high cell density Trench technology

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

TO-252

Ordering Information

Part Number

Package

TO-252

Shipping Quantity

Marking Code

TBL450P04D

80pcs / Tube or 2500pcs / Tape & Reel

045P04D

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

-40

±20

-23

-92

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C, V_GS= -10V)

Pulsed Drain Current

I_DM

Avalanche Energy, Single Pulsed ^*1

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_A= 25°C )

P_D

R_θJC

R_θJA

T_J

2.5

°C /W

°C

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

MTM0998A: October 2022 [P]

www.gmesemi.com

12 3 4 5

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