Datasheet > TBL4P06-S8

TBL4P06-S8

更新时间： 2024-11-21 17:00:55

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	552K
描述
4A, 60V, 1.6W, P Channel, MOSFETs

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数据手册

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TBL4P06-S8 数据手册

P-Channel Enhancement Mode MOSFET

TBL4P06-S8

Features



High density cell design for ultralow R_DS(ON)

Fully characterized avalanche voltage and current

Excellent package for good heat dissipation

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

Mechanical Data



Case: SOP-8

SOP-8

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

SOP-8

Shipping Quantity

Marking Code

TBL4P06-S8

4000 pcs / Tape & Reel

4P06

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

-60

±20

-4

Gate-to-Source Voltage

Continuous Drain Current

Pulsed Drain Current

I_DM

-20

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation

P_D

R_θJA

T_J

1.6

°C /W

°C

Thermal Resistance Junction-to- Air ^*1

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

MTM1318A: December 2022 [2.0]

www.gmesemi.com

12 3 4 5

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