Datasheet > TBL450N15D

TBL450N15D

更新时间： 2024-04-09 19:02:26

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	526K
描述
30A, 150V, 115W, N Channel, Power MOSFETs

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TBL450N15D 数据手册

N-Channel Enhancement Mode MOSFET

TBL450N15D

Features



Super low gate charge

Green device available

Excellent C_dV/ d_teffect decline

Advanced high cell density trench technology

Halogen free

Qualified to AEC-Q101 standards for high reliability

Application



Power switching application

Hard swiched and high frequency circuits

Uninterruptible power supply

Mechanical Data



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

TO-252

Ordering Information

Part Number

Package

TO-252

Shipping Quantity

Marking Code

TBL450N15D

80pcs / Tube or 2500pcs / Tape & Reel

450N15D

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

150

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C,V_GS= 10V) ^*1

Continuous Drain Current (T_C= 100°C,V_GS= 10V) ^*1

Pulsed Drain Current ^*2

I_D

I_DM

Single Pulse Avalanche Energy ^*3

E_AS

216

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJC

T_J

115

°C/W

°C

Thermal Resistance Junction-to-Case ^*1

Operating Junction Temperature Range

Storage Temperature Range

1.09

-55 ~ +150

T_STG

°C

MTM0513A: January 2020

www.gmesemi.com

12 3 4 5

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