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TBL450N15D PDF预览

TBL450N15D

更新时间: 2024-11-19 17:01:55
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 526K
描述
30A, 150V, 115W, N Channel, Power MOSFETs

TBL450N15D 数据手册

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N-Channel Enhancement Mode MOSFET  
TBL450N15D  
Features  
Super low gate charge  
Green device available  
Excellent CdV / dt effect decline  
Advanced high cell density trench technology  
Halogen free  
Qualified to AEC-Q101 standards for high reliability  
Application  
Power switching application  
Hard swiched and high frequency circuits  
Uninterruptible power supply  
Mechanical Data  
Case: TO-252  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208  
TO-252  
Ordering Information  
Part Number  
Package  
TO-252  
Shipping Quantity  
Marking Code  
TBL450N15D  
80pcs / Tube or 2500pcs / Tape & Reel  
450N15D  
Maximum Ratings (@ TA = 25unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
150  
±20  
30  
V
V
Gate-to-Source Voltage  
Continuous Drain Current (TC = 25°C,VGS = 10V) *1  
Continuous Drain Current (TC = 100°C,VGS = 10V) *1  
Pulsed Drain Current *2  
A
ID  
22  
A
IDM  
60  
A
Single Pulse Avalanche Energy *3  
EAS  
216  
mJ  
Thermal Characteristics  
Parameter  
Symbol  
Value  
Unit  
Power Dissipation (TC = 25°C)  
PD  
RθJC  
TJ  
115  
W
°C/W  
°C  
Thermal Resistance Junction-to-Case *1  
Operating Junction Temperature Range  
Storage Temperature Range  
1.09  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
MTM0513A: January 2020  
www.gmesemi.com  
1

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