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TBL450N15TH-5DL8 PDF预览

TBL450N15TH-5DL8

更新时间: 2024-11-19 17:01:11
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 742K
描述
35A, 150V, 115W, N Channel, Power MOSFETs

TBL450N15TH-5DL8 数据手册

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N-Channel Enhancement Mode MOSFET  
TBL450N15TH-5DL8  
Features  
Reliable and Rugged  
100% avalanche tested  
HBM: AEC-Q101-001: H1A (JESD22-A114-B: 1A)  
Halogen free  
Qualified to AEC-Q101 standards for high reliability  
Mechanical Data  
Case: PDFN5×6-8L  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matted-Tin plated; Solderable Per MIL-STD-202,  
Method 208  
PDFN5×6-8L  
Ordering Information  
Part Number  
Package  
PDFN5×6-8L  
Shipping Quantity  
Marking Code  
450N15TH  
TBL450N15TH-5DL8  
5000 pcs / Tape & Reel  
Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
VDSS  
Value  
150  
Unit  
V
Gate-to-Source Voltage  
VGSS  
±20  
V
Continuous Drain Current (TC = 25°C )  
Continuous Drain Current (TC = 100°C )  
Pulsed Drain Current (tp = 10μs, TC = 25°C )  
Single Pulse Avalanche Energy *3  
Power Dissipation (TC = 25°C)  
35  
A
ID  
25  
A
IDM  
EAS  
PD  
140  
A
58  
mJ  
W
°C  
°C  
115  
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
-55 ~ +175  
-55 ~ +175  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Case  
Thermal Resistance Junction-to-Air *1  
RθJC  
RθJA  
-
-
1
1.3  
40  
°C /W  
°C /W  
25  
MTM1083A: August 2023 [2.0]  
www.gmesemi.com  
1

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