Datasheet > TBL450P04DF1

TBL450P04DF1

更新时间： 2024-04-09 19:00:53

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	637K
描述
-40V, P Channel MOSFETs

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中文翻译

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数据手册

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TBL450P04DF1 数据手册

P-Channel Enhancement Mode MOSFET

TBL450P04DF1

Features



Advanced trench technology

Super low gate charge

Excellent C_dV/d_teffect decline

HBM: AEC-Q101-001: H1B (JESD22-A114-B: 1B)

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: DFN2020-6L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

DFN2020-6L

Ordering Information

Part Number

Package

DFN2020-6L

Shipping Quantity

Marking Code

TBL450P04DF1

3000 pcs / Tape & Reel

450P04

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-40

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C )

-12

I_D

-5.3

-3.4

I_DM

-48

E_AS

°C

10.4

P_D

Power Dissipation (T_A= 25°C ) ^*1

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

°C /W

MTM1522A: December 2023 [2.0]

www.gmesemi.com

12 3 4 5

中文翻译

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