Datasheet > TBL500N06-3DL8

TBL500N06-3DL8

更新时间： 2024-04-09 19:01:21

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	668K
描述
15A, 60V, 20W, N Channel, Power MOSFETs

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数据手册

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TBL500N06-3DL8 数据手册

N-Channel Enhancement Mode MOSFET

TBL500N06-3DL8

Features



Lower R_DS(on)

Advanced high cell density trench technology

JESD22-A114-B ESD rating of class 1B per human body model

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: PDFN3×3-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN3×3-8L

Ordering Information

Part Number

Package

PDFN3×3-8L

Shipping Quantity

Marking Code

500N06

TBL500N06-3DL8

5000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-to-Source Voltage

V_GSS

±20

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C )

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

9.5

I_D

I_DM

E_AS

P_D

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

6.3

°C /W

62.5

MTM0587A: March 2023 [2.0]

www.gmesemi.com

12 3 4 5

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