Datasheet > TBL4P06E

TBL4P06E

更新时间： 2024-11-19 17:02:07

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	494K
描述
-60V, P Channel MOSFETs

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中文翻译

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数据手册

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TBL4P06E 数据手册

P-Channel Enhancement Mode MOSFET

TBL4P06E

Features



Advanced trench technology

High density cell design for ultralow R_DS(ON)

Low gate charge

HBM: AEC-Q101-001: H1C (JESD22-A114-B: 1C)

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

Mechanical Data



Case: SOT-89

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

SOT-89

Ordering Information

Part Number

Package

SOT-89

Shipping Quantity

Marking Code

TBL4P06E

1000 pcs / Tape & Reel

4P06

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-60

Gate-to-Source Voltage

±20

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_A= 25°C ) ^*1

Continuous Drain Current (T_A= 70°C ) ^*1

Pulsed Drain Current (t_p=10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_A= 25°C ) ^*1

Operating Junction Temperature Range

Storage Temperature Range

-4

-3

I_D

-2.4

I_DM

E_AS

P_D

-20

°C

1.5

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

°C /W

MTM1550A: January 2024 [2.1]

www.gmesemi.com

12 3 4 5

中文翻译

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