Datasheet > TBL500P02-3DL8

TBL500P02-3DL8

更新时间： 2024-11-19 17:01:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	559K
描述
-20V, P Channel MOSFETs

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中文翻译

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数据手册

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TBL500P02-3DL8 数据手册

P-Channel Enhancement Mode MOSFET

TBL500P02-3DL8

Features



High-speed switching

Drive circuits can be simple

Parallel use is easy

HBM: AEC-Q101-001: H1A (JESD22-A114-B: 1A)

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



Power management in Note Book

Switching application

Battery Powered System

Load switch

Mechanical Data



Case: PDFN3×3-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

PDFN3×3-8L

Ordering Information

Part Number

Package

PDFN3×3-8L

Shipping Quantity

Marking Code

TBL500P02-3DL8

5000 pcs / Tape & Reel

500P02

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-20

±12

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

-16

I_D

-10

I_DM

E_AS

P_D

-64

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

MTM1210A: September 2023 [2.0]

www.gmesemi.com

12 3 4 5

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