Datasheet > TBL500N06R

TBL500N06R

更新时间： 2024-04-09 19:03:24

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	704K
描述
6.1A, 60V, 3.9W, N Channel, Power MOSFETs

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数据手册

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TBL500N06R 数据手册

N-Channel Enhancement Mode MOSFET

TBL500N06R

Features



Lower R_DS(on)

Advanced high cell density trench technology

JESD22-A114-B ESD rating of class 1B per human body model

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: SOT-223

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

SOT-223

Ordering Information

Part Number

Package

SOT-223

Shipping Quantity

Marking Code

500N06R

TBL500N06R

4000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-to-Source Voltage

V_GSS

±20

Continuous Drain Current (T_A= 25°C ) ^*1

Continuous Drain Current (T_A= 70°C ) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*3

6.1

I_D

4.9

I_DM

E_AS

P_D

24.4

°C

Power Dissipation (T_A= 25°C ，R_θJA=32°C/W) ^*1

Operating Junction Temperature Range

Storage Temperature Range

3.9

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

R_θJA

R_θJC

°C /W

11.5

MTM0636A: March 2023 [2.1]

www.gmesemi.com

12 3 4 5

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