Datasheet > SUM90N03-2M2P

SUM90N03-2M2P

更新时间： 2024-11-05 06:14:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	137K
描述
N-Channel 30-V (D-S) MOSFET

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SUM90N03-2M2P 数据手册

New Product

SUM90N03-2m2P

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

_D(A)^{a, e}

•

100 % R_gand UIS Tested

0.0022 at V_GS= 10 V

0.0027 at V_GS= 4.5 V

RoHS

82 nC

COMPLIANT

APPLICATIONS

•

OR-ing

•

Server

TO-263

D S

Top View

N-Channel MOSFET

Ordering Information: SUM90N03-2m2P-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

90^{a, e}

90^e

33^{b, c}

T_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 175 °C)

I_D

T_A= 25 °C

T_A= 70 °C

29.8^{b, c}

I_DM

I_AS

Pulsed Drain Current

200

Avalanche Current Pulse

Single Pulse Avalanche Energy

L = 0.1 mH

E_AS

64.8

90^{a, e}

3.13^{b, c}

250^a

T_C= 25 °C

T_A= 25 °C

I_S

Continuous Source-Drain Diode Current

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

175

3.75^{b, c}

2.63^{b, c}

P_D

Maximum Power Dissipation

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Case

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 10 s

Steady State

°C/W

R_thJC

0.5

0.6

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 90 °C/W.

e. Calculated based on maximum junction temperature. Package limitation current is 90 A.

Document Number: 74342

S-71948-Rev. B, 10-Sep-07

www.vishay.com

12 3 4 5 6

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