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SUM90P10-19L-E3 PDF预览

SUM90P10-19L-E3

更新时间: 2024-11-05 08:58:07
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲PC
页数 文件大小 规格书
6页 112K
描述
P-Channel 100-V (D-S) MOSFET

SUM90P10-19L-E3 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:1.53
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:235999Samacsys Pin Count:3
Samacsys Part Category:MOSFET (P-Channel)Samacsys Package Category:Other
Samacsys Footprint Name:SUM90P10-19L-E3-1Samacsys Released Date:2016-06-13 13:13:08
Is Samacsys:N雪崩能效等级(Eas):245 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):90 A
最大漏极电流 (ID):17.2 A最大漏源导通电阻:0.019 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):375 W
最大脉冲漏极电流 (IDM):90 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SUM90P10-19L-E3 数据手册

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SUM90P10-19L  
Vishay Siliconix  
P-Channel 100-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
VDS (V)  
rDS(on) (Ω)  
ID (A) Qg (Typ)  
RoHS  
0.019 at VGS = - 10 V  
0.021 at VGS = - 4.5 V  
- 90  
COMPLIANT  
- 100  
97 nC  
- 85  
S
TO-263  
G
Drain Connected to Tab  
G
D
S
D
Top View  
Ordering Information: SUM90P10-19L-E3 (Lead (Pb)-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
VDS  
Limit  
- 100  
20  
Unit  
V
VGS  
TC = 25 °C  
- 90  
- 52  
- 17.2b, c  
- 9.9b, c  
- 90  
- 250  
- 9b, c  
- 70  
T
C = 125 °C  
TA = 25 °C  
TA = 125 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
Continuous Source-Drain Diode Current  
TA = 25 °C  
IAS  
Avalanche Current  
L = 0.1 mH  
EAS  
mJ  
W
Single-Pulse Avalanche Energy  
245  
375  
125  
13.6b, c  
4.5b, c  
TC = 25 °C  
T
C = 125 °C  
TA = 25 °C  
TA = 125 °C  
PD  
Maximum Power Dissipation  
TJ, Tstg  
°C  
Operating Junction and Storage Temperature Range  
- 50 to 175  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Case (Drain)  
Symbol  
RthJA  
Typical  
8
Maximum  
Unit  
t 10 sec  
11  
°C/W  
RthJC  
Steady State  
0.33  
0.4  
Notes:  
a. Package Limited.  
b. Surface Mounted on 1" x 1" FR4 Board.  
c. t = 10 sec.  
d. Maximum under Steady State conditions is 40 °C/W.  
Document Number: 73474  
S-71207-Rev. D, 18-Jun-07  
www.vishay.com  
1

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