5秒后页面跳转
SUM90N08-4M8P-E3 PDF预览

SUM90N08-4M8P-E3

更新时间: 2024-11-25 06:14:55
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
6页 107K
描述
N-Channel 75-V (D-S) MOSFET

SUM90N08-4M8P-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.81
Is Samacsys:N雪崩能效等级(Eas):245 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V最大漏极电流 (Abs) (ID):90 A
最大漏极电流 (ID):90 A最大漏源导通电阻:0.006 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):240 A
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SUM90N08-4M8P-E3 数据手册

 浏览型号SUM90N08-4M8P-E3的Datasheet PDF文件第2页浏览型号SUM90N08-4M8P-E3的Datasheet PDF文件第3页浏览型号SUM90N08-4M8P-E3的Datasheet PDF文件第4页浏览型号SUM90N08-4M8P-E3的Datasheet PDF文件第5页浏览型号SUM90N08-4M8P-E3的Datasheet PDF文件第6页 
SUM90N08-4m8P  
Vishay Siliconix  
N-Channel 75-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
V(BR)DSS (V)  
rDS(on) (Ω)  
ID (A)  
Qg (Typ)  
175 °C Junction Temperature  
100 % UIS Tested  
90d  
90d  
0.0048 at VGS = 10 V  
0.006 at VGS = 8 V  
RoHS  
75  
105  
COMPLIANT  
APPLICATIONS  
Power Supply  
- Half-Bridge  
- Secondary Synchronous Rectification  
Industrial  
TO-263  
D
G
D S  
G
Top View  
Ordering Information: SUM90N08-4m8P-E3 (Lead (Pb)-free)  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
C
Parameter  
Symbol  
Limit  
75  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
90d  
TC = 25 °C  
TC = 70 °C  
Continuous Drain Current (TJ = 175 °C)  
ID  
90d  
240  
70  
A
IDM  
IAS  
Pulsed Drain Current  
Avalanche Current  
Single Pulse Avalanche Energya  
EAS  
L = 0.1 mH  
TC = 25 °C  
245  
mJ  
W
300b  
3.75  
Maximum Power Dissipationa  
PD  
T
A = 25 °Cc  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 175  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Junction-to-Ambient (PCB Mount)c  
Symbol  
Limit  
40  
Unit  
RthJA  
°C/W  
RthJC  
Junction-to-Case (Drain)  
0.5  
Notes:  
a. Duty cycle 1 %.  
b. See SOA curve for voltage derating.  
c. When Mounted on 1" square PCB (FR-4 material).  
d. Package limited.  
Document Number: 74458  
S-71663-Rev. C, 06-Aug-07  
www.vishay.com  
1

SUM90N08-4M8P-E3 替代型号

型号 品牌 替代类型 描述 数据表
SUM90N10-8M2P-E3 VISHAY

类似代替

N-Channel 100-V (D-S) MOSFET
IRFZ48VPBF INFINEON

功能相似

Advanced Process Technology
IRF2807PBF INFINEON

功能相似

Advanced Process Technology

与SUM90N08-4M8P-E3相关器件

型号 品牌 获取价格 描述 数据表
SUM90N08-6M2P VISHAY

获取价格

N-Channel 75-V (D-S) MOSFET
SUM90N08-6M2P-E3 VISHAY

获取价格

N-Channel 75-V (D-S) MOSFET
SUM90N08-7M6P VISHAY

获取价格

SUM90N08-7m6P
SUM90N08-7M6P-E3 VISHAY

获取价格

SUM90N08-7m6P
SUM90N10-8M2P VISHAY

获取价格

N-Channel 100-V (D-S) MOSFET
SUM90N10-8M2P-E3 VISHAY

获取价格

N-Channel 100-V (D-S) MOSFET
SUM90P10-19L VISHAY

获取价格

P-Channel 100-V (D-S) MOSFET
SUM90P10-19L_08 VISHAY

获取价格

P-Channel 100-V (D-S) MOSFET
SUM90P10-19L-E3 VISHAY

获取价格

P-Channel 100-V (D-S) MOSFET
SUM90UF SSDI

获取价格

400 mA 6,000 thru 9,000 VOLTS 60 ns ULTRA FAST RECOVERY RECTIFIER