Datasheet > SUM90P10-19L_08

SUM90P10-19L_08

更新时间： 2024-11-25 08:58:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	112K
描述
P-Channel 100-V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SUM90P10-19L_08 数据手册

SUM90P10-19L

Vishay Siliconix

P-Channel 100-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

V_DS(V)

r_DS(on)(Ω)

I_D(A) Q_g(Typ)

RoHS

0.019 at V_GS= - 10 V

0.021 at V_GS= - 4.5 V

- 90

COMPLIANT

- 100

97 nC

- 85

TO-263

Drain Connected to Tab

Top View

Ordering Information: SUM90P10-19L-E3 (Lead (Pb)-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

Limit

- 100

Unit

V_GS

T_C= 25 °C

- 90

- 52

- 17.2^{b, c}

- 9.9^{b, c}

- 90

- 250

- 9^{b, c}

- 70

_C= 125 °C

T_A= 25 °C

T_A= 125 °C

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

I_AS

Avalanche Current

L = 0.1 mH

E_AS

Single-Pulse Avalanche Energy

245

375

125

13.6^{b, c}

4.5^{b, c}

T_C= 25 °C

_C= 125 °C

T_A= 25 °C

T_A= 125 °C

P_D

Maximum Power Dissipation

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

- 50 to 175

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 10 sec

°C/W

R_thJC

Steady State

0.33

0.4

Notes:

a. Package Limited.

b. Surface Mounted on 1" x 1" FR4 Board.

c. t = 10 sec.

d. Maximum under Steady State conditions is 40 °C/W.

Document Number: 73474

S-71207-Rev. D, 18-Jun-07

www.vishay.com

12 3 4 5 6

中文翻译

下载PDF

与SUM90P10-19L_08相关器件

型号	品牌	获取价格	描述	数据表
SUM90P10-19L-E3	VISHAY	获取价格	P-Channel 100-V (D-S) MOSFET
SUM90UF	SSDI	获取价格	400 mA 6,000 thru 9,000 VOLTS 60 ns ULTRA FAST RECOVERY RECTIFIER
SUM90UFSMS	SSDI	获取价格	400 mA 6,000 thru 9,000 VOLTS 60 ns ULTRA FAST RECOVERY RECTIFIER
SUM90UFSMSS	SSDI	获取价格	Rectifier Diode, 1 Element, 0.4A, Silicon, HERMETIC SEALED PACKAGE-2
SUM90UFSMSTX	SSDI	获取价格	Rectifier Diode, 1 Element, 0.4A, Silicon, HERMETIC SEALED PACKAGE-2
SUM90UFSMSTXV	SSDI	获取价格	Rectifier Diode, 1 Element, 0.4A, Silicon, HERMETIC SEALED PACKAGE-2
SUM90UFTX	SSDI	获取价格	Rectifier Diode, 1 Element, 0.4A, Silicon, HERMETIC SEALED PACKAGE-2
SUMIL25	STMICROELECTRONICS	获取价格	RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS
SUN2309	ETC	获取价格	P 沟道 MOSFET SUN2309SG,配套充电IC的PMOS管
SUN2310SG	ETC	获取价格	P 沟道 MOSFET SUN2310SG,带散热片配套充电IC的PMOS管