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SUM90N04-3M3P-E3 PDF预览

SUM90N04-3M3P-E3

更新时间: 2024-11-16 19:53:59
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲晶体管
页数 文件大小 规格书
8页 185K
描述
TRANSISTOR 90 A, 40 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power

SUM90N04-3M3P-E3 技术参数

生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83雪崩能效等级(Eas):180 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):90 A最大漏极电流 (ID):90 A
最大漏源导通电阻:0.0033 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):125 W
最大脉冲漏极电流 (IDM):160 A子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SUM90N04-3M3P-E3 数据手册

 浏览型号SUM90N04-3M3P-E3的Datasheet PDF文件第2页浏览型号SUM90N04-3M3P-E3的Datasheet PDF文件第3页浏览型号SUM90N04-3M3P-E3的Datasheet PDF文件第4页浏览型号SUM90N04-3M3P-E3的Datasheet PDF文件第5页浏览型号SUM90N04-3M3P-E3的Datasheet PDF文件第6页浏览型号SUM90N04-3M3P-E3的Datasheet PDF文件第7页 
SUM90N04-3m3P  
www.vishay.com  
Vishay Siliconix  
N-Channel 40 V (D-S) MOSFET  
FEATURES  
• TrenchFET® Power MOSFET  
PRODUCT SUMMARY  
VDS (V)  
RDS(on) () MAX.  
ID (A) d  
90  
Qg (TYP.)  
• 100 % Rg and UIS tested  
0.0033 at VGS = 10 V  
0.0041 at VGS = 4.5 V  
40  
87  
• Material categorization: For definitions of  
compliance please see www.vishay.com/doc?99912  
90  
APPLICATIONS  
• Power supply  
D
TO-263  
- Secondary synchronous rectification  
• DC/DC converter  
• Power tools  
G
S
S
D
G
Top View  
N-Channel MOSFET  
Ordering Information:  
SUM90N04-3m3P-E3 (Lead (Pb)-free)  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
40  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
TC = 25 °C  
TC = 70 °C  
90 d  
Continuous Drain Current (TJ = 150 °C)  
ID  
90 d  
A
Pulsed Drain Current (t = 300 μs)  
Avalanche Current  
IDM  
IAS  
160  
60  
Single Avalanche Energy a  
L = 0.1 mH  
TC = 25 °C  
TA = 25 °C c  
EAS  
180  
mJ  
W
125 b  
3.1  
Maximum Power Dissipation a  
PD  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
-55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
40  
UNIT  
Junction-to-Ambient (PCB Mount) c  
Junction-to-Case (Drain)  
°C/W  
RthJC  
1
Notes  
a. Duty cycle 1 %.  
b. See SOA curve for voltage derating.  
c. When mounted on 1" square PCB (FR-4 material).  
d. Package limited.  
S13-2462-Rev. B, 02-Dec-13  
Document Number: 63397  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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