Datasheet > 晶体管 > 功率场效应晶体管> SUM110N02-03P

SUM110N02-03P

更新时间： 2024-01-09 17:10:34

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
5页	44K
描述
N-Channel 20-V (D-S) 175 C MOSFET

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中文翻译

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技术参数
数据手册

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SUM110N02-03P 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	110 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	120 W
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

SUM110N02-03P 数据手册

SUM110N02-03P

New Product

Vishay Siliconix

N-Channel 20-V (D-S) 175_C MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

I_D(A)^a

D 175_C Junction Temperature

D Optimized for Low-Side Synchronous

Rectifier

V_(BR)DSS(V)

r_DS(on)(W)

0.0032 @ V = 10 V

110

0.0052 @ V = 4.5 V

110

APPLICATIONS

D Synchronous Buck DC/DC Conversion

- Desktop

- Server

D Load Switch

TO-263

DRAIN connected to TAB

D S

Top View

SUM110N02-03P

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

110

Continuous Drain Current (T = 175_C)

= 100_C

102

300

Pulsed Drain Current

= 25_C

120

Maximum Power Dissipation

= 25_C

3.75

Operating Junction and Storage Temperature Range

T , T

-55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Junction-to-Ambient (PCB Mount)

thJA

thJC

C/W

Junction-to-Case

1.25

Notes

a. Package limited.

b. Duty cycle v 1%.

c. See SOA curve for voltage derating.

d. When mounted on 1” square PCB (FR-4 material).

Document Number: 72096

S-22451—Rev. A, 20-Jan-03

www.vishay.com

12 3 4 5

中文翻译

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SUM110N02-03P-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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SUM110N03-03P-E3	VISHAY	获取价格	TRANSISTOR 110 A, 30 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN,
SUM110N03-04P	VISHAY	获取价格	N-Channel 30-V (D-S) 175 Celsius MOSFET
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