是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | D2PAK |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.16 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 110 A | 最大漏极电流 (ID): | 110 A |
最大漏源导通电阻: | 0.0026 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 375 W |
最大脉冲漏极电流 (IDM): | 400 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 40 |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
SUM90N03-2M2P-E3 | VISHAY |
类似代替 |
N-Channel 30-V (D-S) MOSFET | |
SUM110N03-03 | VISHAY |
功能相似 |
N-Channel 30-V (D-S) 175C MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SUM110N03-04P | VISHAY |
获取价格 |
N-Channel 30-V (D-S) 175 Celsius MOSFET | |
SUM110N03-04P |
获取价格 |
N-Channel 30-V (D-S) 175∑C MOSFET | ||
SUM110N03-04P-E3 | VISHAY |
获取价格 |
TRANSISTOR 110 A, 30 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, LEAD FREE, TO- | |
SUM110N03-04P-T1 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SUM110N03-04P-T1-E3 | VISHAY |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SUM110N04-02L | VISHAY |
获取价格 |
N-Channel 40-V (D-S) 200 Degree Celcious MOSFET | |
SUM110N04-02L-E3 | VISHAY |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SUM110N04-03 | VISHAY |
获取价格 |
N-Channel 40-V (D-S) 200C MOSFET | |
SUM110N04-03-E3 | VISHAY |
获取价格 |
TRANSISTOR 110 A, 40 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT | |
SUM110N04-03L | VISHAY |
获取价格 |
N-Channel 40-V (D-S) 175C MOSFET |