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SUM110N03-03P-E3 PDF预览

SUM110N03-03P-E3

更新时间: 2024-09-24 15:53:11
品牌 Logo 应用领域
威世 - VISHAY 脉冲晶体管
页数 文件大小 规格书
6页 74K
描述
TRANSISTOR 110 A, 30 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN, FET General Purpose Power

SUM110N03-03P-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.16外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):110 A最大漏极电流 (ID):110 A
最大漏源导通电阻:0.0026 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):375 W
最大脉冲漏极电流 (IDM):400 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICONBase Number Matches:1

SUM110N03-03P-E3 数据手册

 浏览型号SUM110N03-03P-E3的Datasheet PDF文件第2页浏览型号SUM110N03-03P-E3的Datasheet PDF文件第3页浏览型号SUM110N03-03P-E3的Datasheet PDF文件第4页浏览型号SUM110N03-03P-E3的Datasheet PDF文件第5页浏览型号SUM110N03-03P-E3的Datasheet PDF文件第6页 
SUM110N03-03P  
Vishay Siliconix  
N-Channel 30-V (D-S) 175_C MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
D 175_C Junction Temperature  
D Optimized for Low-Side Synchronous Rectifier  
D 100% Rg Tested  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)a  
a
0.0026 @ V = 10 V  
110  
GS  
30  
a
0.004 @ V = 4.5 V  
GS  
110  
APPLICATIONS  
D Desktop or Server CPU Core  
D
TO-263  
DRAIN connected to TAB  
G
G
D S  
Top View  
Ordering Information: SUM110N03-03P  
SUM110N03-03P-E3 (Lead Free)  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
30  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
GS  
V
"20  
a
T
= 25_C  
= 100_C  
110  
C
Continuous Drain Current (T = 175_C)  
I
J
D
a
T
110  
C
A
Pulsed Drain Current  
Avalanche Current  
I
400  
65  
DM  
I
AR  
b
Repetitive Avalanche Energy  
L = 0.1 mH  
E
AR  
211  
mJ  
c
T
= 25_C (TO-220AB and TO-263)  
375  
C
b
Maximum Power Dissipation  
P
W
D
d
T
A
= 25_C (TO-263)  
3.75  
Operating Junction and Storage Temperature Range  
T , T  
J
55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
d
PCB Mount (TO-263)  
40  
62.5  
0.4  
Junction-to-Ambient  
Junction-to-Case  
R
thJA  
R
thJC  
Free Air (TO-220AB)  
_C/W  
Notes  
a. Package limited.  
b. Duty cycle v 1%.  
c. See SOA curve for voltage derating.  
d. When mounted on 1” square PCB (FR-4 material).  
Document Number: 71964  
S-32523—Rev. B, 08-Dec-03  
www.vishay.com  
1

SUM110N03-03P-E3 替代型号

型号 品牌 替代类型 描述 数据表
SUM90N03-2M2P-E3 VISHAY

类似代替

N-Channel 30-V (D-S) MOSFET
SUM110N03-03 VISHAY

功能相似

N-Channel 30-V (D-S) 175C MOSFET

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