5秒后页面跳转
SUM110N04-03-E3 PDF预览

SUM110N04-03-E3

更新时间: 2024-09-25 15:53:11
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲晶体管
页数 文件大小 规格书
6页 95K
描述
TRANSISTOR 110 A, 40 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power

SUM110N04-03-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.27
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):110 A最大漏极电流 (ID):110 A
最大漏源导通电阻:0.0028 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):437.5 W
最大脉冲漏极电流 (IDM):440 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SUM110N04-03-E3 数据手册

 浏览型号SUM110N04-03-E3的Datasheet PDF文件第2页浏览型号SUM110N04-03-E3的Datasheet PDF文件第3页浏览型号SUM110N04-03-E3的Datasheet PDF文件第4页浏览型号SUM110N04-03-E3的Datasheet PDF文件第5页浏览型号SUM110N04-03-E3的Datasheet PDF文件第6页 
SUM110N04-03  
Vishay Siliconix  
N-Channel 40-V (D-S) 175 °C MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
V(BR)DSS (V)  
rDS(on) (Ω)  
ID (A)  
Available  
Package with Low Thermal Resistance  
110a  
0.0028 at VGS = 10 V  
40  
RoHS*  
COMPLIANT  
D
TO-263  
G
G
D S  
Top View  
S
Ordering Information: SUM110N04-03  
SUM110N04-03-E3 (Lead (Pb)-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
C
Parameter  
Symbol  
Limit  
40  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
110a  
TC = 25 °C  
Continuous Drain Current (TJ = 175 °C)  
ID  
110a  
440  
70  
TC = 125 °C  
A
IDM  
IAR  
Pulsed Drain Current  
Avalanche Current  
Repetitive Avalanche Energyb  
EAR  
L = 0.1 mH  
TC = 25 °C  
211  
mJ  
W
437.5c  
3.75  
Maximum Power Dissipationb  
PD  
T
A = 25 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 175  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
40  
Unit  
PCB Mountd  
RthJA  
Junction-to-Ambient  
°C/W  
RthJC  
Junction-to-Case (Drain)  
0.4  
Notes:  
a. Package limited.  
b. Duty cycle 1 %.  
c. See SOA curve for voltage derating.  
d. When mounted on 1" square PCB (FR-4 material).  
* PB containing terminations are not RoHS compliant, exemptions may apply.  
Document Number: 71745  
S-80108-Rev. E, 21-Jan-08  
www.vishay.com  
1

SUM110N04-03-E3 替代型号

型号 品牌 替代类型 描述 数据表
SUM110N04-03P-E3 VISHAY

类似代替

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SUM110N04-03 VISHAY

功能相似

N-Channel 40-V (D-S) 200C MOSFET

与SUM110N04-03-E3相关器件

型号 品牌 获取价格 描述 数据表
SUM110N04-03L VISHAY

获取价格

N-Channel 40-V (D-S) 175C MOSFET
SUM110N04-03P VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SUM110N04-03P-E3 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SUM110N04-04 VISHAY

获取价格

N-Channel 40-V (D-S) 175C MOSFET
SUM110N04-04-E3 VISHAY

获取价格

TRANSISTOR 110 A, 40 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT
SUM110N04-05H VISHAY

获取价格

N-Channel 40-V (D-S) 175∑C MOSFET
SUM110N04-05H_08 VISHAY

获取价格

N-Channel 40-V (D-S) 175 °C MOSFET
SUM110N04-05H-E3 VISHAY

获取价格

N-Channel 40-V (D-S) 175 °C MOSFET
SUM110N04-2M1P VISHAY

获取价格

N-Channel 40-V (D-S) MOSFET
SUM110N04-2M1P-E3 VISHAY

获取价格

N-Channel 40-V (D-S) MOSFET