Datasheet > STWA48N60M6

STWA48N60M6

更新时间： 2023-12-20 18:44:33

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	490K
描述
N沟道600 V、61 mOhm典型值、39 A MDmesh M6功率MOSFET，TO-247长引线封装

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STWA48N60M6 数据手册

STWA48N60M6

Electrical ratings

Table 1. Absolute maximum ratings

Parameter

Symbol

Value

±25

Unit

Gate-source voltage

Drain current (continuous) at T = 25 °C

Drain current (continuous) at T = 100 °C

(1)

Drain current (pulsed)

140

250

Total power dissipation at T = 25 °C

TOT

dv/dt⁽²⁾

dv/dt⁽³⁾

Peak diode recovery voltage slope

MOSFET dv/dt ruggedness

V/ns

°C

100

Storage temperature range

stg

-55 to 150

Operating junction temperature range

1. Pulse width is limited by safe operating area.

≤ 39 A, di/dt ≤ 400 A/µs, V

< V

, V = 400 V

(BR)DSS DD

DS(peak)

≤ 480 V

Table 2. Thermal data

Parameter

Symbol

Value

0.5

Unit

°C/W

Thermal resistance junction-case

Thermal resistance junction-ambient

thj-case

thj-amb

Table 3. Avalanche characteristics

Symbol

Parameter

Value

5.5

Unit

Avalanche current, repetitive or not repetitive (pulse width limited by T

)

jmax

Single pulse avalanche energy (starting T = 25 °C, I = I , V = 50 V)

j D AR DD

950

DS12689 - Rev 2

page 2/13

123 4 5 6 7...13

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