Datasheet > STW82103B

STW82103B

更新时间： 2024-01-02 18:39:54

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		转换器射频
页数	文件大小	规格书
67页	768K
描述
RF down converter with embedded integer-N synthesizer

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STW82103B 数据手册

STW82103B

RF down converter with embedded integer-N synthesizer

Datasheet −production data

Features

■High linearity:

– IIP3: +25 dBm

– 2FRF-2FLO spurious rejection: 80 dBc

■ Noise figure:

– NF: 10.5 dB

Applications

■ Conversion gain

■ Cellular infrastructure equipment:

– IF sampling receivers

– CG: 8 dB

■ RF range: 2300 MHz to 2700 MHz

– Digital PA linearization loops

■ Wide IF amplifier frequency range: 70 MHz to

■ Other wireless communication systems.

400 MHz

Table 1.

Device summary

■ Integrated RF balun with internal matching

Part number

Package

Packaging

Tray

Tape and reel

■ Dual differential integrated VCOs with

automatic center frequency calibration:

STW82103B

VFQFPN-44

– LOA: 2200 to 2550 MHz

– LOB: 2500 to 3000 MHz

STW82103BTR

Description

■ Embedded integer-N synthesizer

– Dual modulus programmable prescaler

(16/17 or 19/20)

– Programmable reference frequency divider

(10 bits)

The STMicroelectronics STW82103B is an

integrated down converter providing 8 dB of gain,

10.5 dB NF, and a very high input linearity by

means of its passive mixer.

– Adjustable charge pump current

– Digital lock detector

– Excellent integrated phase noise

– Fast lock time: 150 µs

Embedding two wide band auto calibrating VCOs

and an integer-N synthesizer, the STW82103B is

suitable for both Rx and Tx requirements for

Cellular infrastructure equipment.

The integrated RF balun and internal matching

permit direct 50 ohm single-ended interface to RF

port. The IF output is suitable for driving 200-ohm

impedance filters.

■ Integrated DAC with dual current output

■ Supply: 3.3 V and 5 V analog,

3.3 V digital

■ Dual digital bus interface: SPI and I C bus (fast

By embedding a DAC with dual current output to

drive an external PIN diode attenuator, the

STW82103B replaces several costly discrete

components and offers a significant footprint

reduction.

mode) with 3 bit programmable address

(1101A A A )

1 0

■ Process: 0.35 µm BICMOS SiGe

■ Operating temperature range -40 to +85 C

■ 44-lead exposed pad VFQFPN package

The STW82103B device is designed with

STMicroelectronics advanced 0.35 µm

SiGe process. Its performance is specified over a

-40 °C to +85 °C temperature range.

7x7x1.0 mm

April 2012

Doc ID 018517 Rev 2

1/67

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...67

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