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STW8NB100 PDF预览

STW8NB100

更新时间: 2024-01-14 23:10:01
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 53K
描述
N - CHANNEL 1000V - 1.2ohm- 8A - TO-247 PowerMESH MOSFET

STW8NB100 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-247AC包装说明:TO-247, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.64
雪崩能效等级(Eas):700 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:1000 V最大漏极电流 (Abs) (ID):8 A
最大漏极电流 (ID):7.3 A最大漏源导通电阻:1.45 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):190 W
最大脉冲漏极电流 (IDM):29.2 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STW8NB100 数据手册

 浏览型号STW8NB100的Datasheet PDF文件第2页浏览型号STW8NB100的Datasheet PDF文件第3页浏览型号STW8NB100的Datasheet PDF文件第4页浏览型号STW8NB100的Datasheet PDF文件第5页 
STW8NB100  
®
N - CHANNEL 1000V - 1.2- 8A - TO-247  
PowerMESH MOSFET  
PRELIMINARY DATA  
TYPE  
STW8NB100  
VDSS  
RDS(on)  
ID  
1000 V  
< 1.5 Ω  
8 A  
TYPICAL RDS(on) = 1.2 Ω  
EXTREMELY HIGH dv/dt CAPABILITY  
± 30V GATE TO SOURCE VOLTAGE RATING  
100% AVALANCHE TESTED  
LOW INTRINSIC CAPACITANCE  
GATE CHARGE MINIMIZED  
REDUCED VOLTAGE SPREAD  
3
2
1
DESCRIPTION  
TO-247  
Using the latest high voltage MESH OVERLAY  
process, STMicroelectronics has designed an ad-  
vanced family of power MOSFETs with outstand-  
ing performances. The new patent pending strip  
layout coupled with the Company’s proprietary  
edge termination structure, gives the lowest  
RDS(on) per area, exceptional avalanche and  
dv/dt capabilities and unrivalled gate charge and  
switching characteristics.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLY (SMPS)  
DC-AC CONVERTER FOR WELDING  
EQUIPMENT AND UNINTERRUPTABLE  
POWER SUPPLY AND MOTOR DRIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
Unit  
Drain-source Voltage (VGS = 0)  
1000  
V
V
1000  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
± 30  
V
o
Drain Current (continuous) at Tc = 25 C  
8
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
5
32  
A
I
DM()  
Drain Current (pulsed)  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
190  
W
Derating Factor  
1.52  
4
W/oC  
V/ns  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
Tstg  
Storage Temperature  
-65 to 150  
Tj  
Max. Operating Junction Temperature  
150  
() Pulse width limited by safe operating area  
(1) ISD ≤8 Α, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX  
1/5  
March 1999  

STW8NB100 替代型号

型号 品牌 替代类型 描述 数据表
STP5NK100Z STMICROELECTRONICS

类似代替

N-CHANNEL 1000V - 2.7W - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESHTM MOSFET
STW13NK100Z STMICROELECTRONICS

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N-CHANNEL 1000V - 0.56 OHM - 13A TO-247 Zener-Protected SuperMESH Power MOSFET
STW12NK90Z STMICROELECTRONICS

类似代替

N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET

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