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STW8NC70Z PDF预览

STW8NC70Z

更新时间: 2024-11-28 22:14:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
8页 243K
描述
N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerMESH⑩III MOSFET

STW8NC70Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-247包装说明:TO-247, 3 PIN
针数:3Reach Compliance Code:not_compliant
风险等级:5.66雪崩能效等级(Eas):250 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:700 V
最大漏极电流 (Abs) (ID):7 A最大漏极电流 (ID):7 A
最大漏源导通电阻:1.38 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):160 W最大脉冲漏极电流 (IDM):28 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STW8NC70Z 数据手册

 浏览型号STW8NC70Z的Datasheet PDF文件第2页浏览型号STW8NC70Z的Datasheet PDF文件第3页浏览型号STW8NC70Z的Datasheet PDF文件第4页浏览型号STW8NC70Z的Datasheet PDF文件第5页浏览型号STW8NC70Z的Datasheet PDF文件第6页浏览型号STW8NC70Z的Datasheet PDF文件第7页 
STW8NC70Z  
N-CHANNEL 700V - 1.1 - 7A TO-247  
Zener-Protected PowerMESH™III MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STW8NC70Z  
700 V  
< 1.38 Ω  
7A  
TYPICAL R (on) = 1.1 Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY GATE-  
TO-SOURCE ZENER DIODES  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
TO-247  
DESCRIPTION  
The third generation of MESH OVERLAY™ Power  
MOSFETs for very high voltage exhibits unsur-  
passed on-resistance per unit area while integrating  
back-to-back Zener diodes between gate and  
source. Such arrangement gives extra ESD capabil-  
ity with higher ruggedness performance as request-  
ed by a large variety of single-switch applications.  
APPLICATIONS  
SINGLE-ENDED SMPS IN MONITORS,  
COMPUTER AND INDUSTRIAL APPLICATION  
WELDING EQUIPMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
700  
700  
±25  
7
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
Drain-gate Voltage (R = 20 k)  
V
DGR  
GS  
V
GS  
Gate- source Voltage  
V
I
Drain Current (continuos) at T = 25°C  
A
D
C
I
Drain Current (continuos) at T = 100°C  
4.4  
A
D
C
I
()  
Drain Current (pulsed)  
28  
A
DM  
P
Total Dissipation at T = 25°C  
160  
1.28  
±50  
3
W
TOT  
C
Derating Factor  
W/°C  
mA  
KV  
V/ns  
°C  
°C  
I
Gate-source Current (*)  
GS  
V
Gate source ESD(HBM-C=100pF, R=15KΩ)  
Peak Diode Recovery voltage slope  
Storage Temperature  
ESD(G-S)  
dv/dt (1)  
3
T
–65 to 150  
150  
stg  
T
Max. Operating Junction Temperature  
j
(•)Pulse width limited by safe operating area  
(1)I 7A, di/dt 100A/µs, V V , T T  
JMAX.  
SD  
DD  
(BR)DSS  
j
(*)Limited only by maximum temperature allowed  
May 2001  
1/8  

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