Datasheet > STW9NA80

STW9NA80

更新时间： 2024-11-26 22:14:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
10页	134K
描述
N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

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数据手册
替代型号

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STW9NA80 数据手册

STW9NA80

STH9NA80FI

N - CHANNEL 800V - 0.85

Ω

- 9.1A - TO-247/ISOWATT218

FAST POWER MOS TRANSISTOR

TYPE

V_DSS

R_DS(on)

I_D

STW9NA80

STH9NA80FI

800 V

< 1.0 Ω

< 1.0

Ω

9.1 A

5.9 A

■

TYPICAL R_DS(on)= 0.85 Ω

± 30V GATE TO SOURCE VOLTAGE RATING

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

REDUCED THRESHOLD VOLTAGE SPREAD

TO-247

ISOWATT218

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES(SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

STW9NA80 STH9NA80FI

Unit

V_DS

V_DGR

V_GS

I_D

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 k

Gate-source Voltage

800

)

Ω

± 30

Drain Current (continuous) at T_c= 25 ^oC

9.1

5.9

3.9

I_D

Drain Current (continuous) at T_c= 100 C

_DM(• )

Drain Current (pulsed)

36.4

190

1.52

36.4

P_tot

Total Dissipation at T_c= 25 C

W/^oC

Derating Factor

0.64

4000

V_ISO

T_stg

T_j

Insulation Withstand Voltage (DC)

Storage Temperature

-65 to 150

150

^oC

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/10

November 1998

12 3 4 5 6 7...10

中文翻译

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STW9NA80 替代型号

型号	品牌	替代类型	描述	数据表
2SK2320	TOSHIBA	功能相似	TRANSISTOR 8.5 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
SSF17N60A	FAIRCHILD	功能相似	Advanced Power MOSFET

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