Datasheet > STWA20N95K5

STWA20N95K5

更新时间： 2023-12-20 18:44:38

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	726K
描述
N沟道950 V、0.275 Ohm典型值、17.5 A MDmesh K5功率MOSFET，TO-247长引线封装

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STWA20N95K5 数据手册

STWA20N95K5

N-channel 950 V, 0.275 Ω typ., 17.5 A MDmesh™ K5

Power MOSFET in a TO-247 long leads package

Datasheet - production data

Features

P_TOT

Order code

V_DS

R_DS(on)max.

I_D

250 W

STWA20N95K5

950 V

0.330 Ω

17.5 A



Industry’s lowest R_DS(on)x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

100% avalanche tested

Zener-protected

Applications



Switching applications

Figure 1: Internal schematic diagram

D(2)

Description

This very high voltage N-channel Power

MOSFET is designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

G(1)

S(3)

AM01476v1_No_tab

Table 1: Device summary

Marking

20N95K5

Order code

Package

Packing

STWA20N95K5

TO-247 long leads

Tube

January 2017

DocID025573 Rev 2

1/13

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...13

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