Datasheet > STWA32N65DM6AG

STWA32N65DM6AG

更新时间： 2023-12-20 18:46:30

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	250K
描述
Automotive-grade N-channel 650 V, 83 mOhm typ., 37 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

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STWA32N65DM6AG 数据手册

STWA32N65DM6AG

Datasheet

Automotive-grade N-channel 650 V, 83 mΩ typ., 37 A MDmesh DM6

Power MOSFET in a TO-247 long leads package

Features

DS(on)

max.

Order code

STWA32N65DM6AG

650 V

97 mΩ

37 A

•

AEC-Q101 qualified

Fast-recovery body diode

TO-247 long leads

Lower R_DS(on)per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

D(2, TAB)

Extremely high dv/dt ruggedness

Zener-protected

G(1)

Applications

S(3)

•

Switching applications

AM01476v1_tab

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation,

DM6 combines very low recovery charge (Q_rr), recovery time (t_rr) and excellent

improvement in R_DS(on)per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status link

STWA32N65DM6AG

Product summary

Order code

Marking

STWA32N65DM6AG

32N65DM6

Package

Packing

TO-247 long leads

Tube

DS13715 - Rev 2 - August 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

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