Datasheet > STWA32N65DM6AG

STWA32N65DM6AG

更新时间： 2023-12-20 18:46:30

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	250K
描述
Automotive-grade N-channel 650 V, 83 mOhm typ., 37 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

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STWA32N65DM6AG 数据手册

STWA32N65DM6AG

Electrical ratings

Table 1. Absolute maximum ratings

Parameter

Symbol

Value

±25

Unit

Gate-source voltage

Drain current (continuous) at T = 25 °C

Drain current (continuous) at T = 100 °C

(1)

Drain current (pulsed)

120

320

100

1000

100

Total power dissipation at T = 25 °C

TOT

dv/dt⁽²⁾

di/dt⁽²⁾

dv/dt⁽³⁾

Peak diode recovery voltage slope

Peak diode recovery current slope

MOSFET dv/dt ruggedness

V/ns

A/μs

V/ns

°C

Operating junction temperature range

Storage temperature range

-55 to 150

°C

stg

1. Pulse width limited by safe operating area.

≤ 37 A, V (peak) < V

, V = 400 V.

(BR)DSS DD

≤ 520 V.

Table 2. Thermal data

Symbol

Parameter

Value

0.39

Unit

°C/W

thJC

Thermal resistance, junction-to-case

Thermal resistance, junction-to-ambient

thJA

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or non-repetitive (pulse width limited by T max.)

Single pulse avalanche energy (starting T = 25 °C, I = I , V = 100 V)

778

DS13715 - Rev 2

page 2/12

123 4 5 6 7...12

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