Datasheet > STWA32N65DM6AG

STWA32N65DM6AG

更新时间： 2023-12-20 18:46:30

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	250K
描述
Automotive-grade N-channel 650 V, 83 mOhm typ., 37 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

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STWA32N65DM6AG 数据手册

STWA32N65DM6AG

Electrical characteristics

(curves)

2.1

Electrical characteristics (curves)

Figure 1. Safe operating area

Figure 2. Maximum transient thermal impedance

Z_thJC

(°C/W)

GADG060820211149SOA

I_DM

GADG210420210932ZTH

I_D

(A)

0.4 0.3 0.2 0.1

10 ²

10 ¹

10 ⁰

10 ^-1

t_p=1 µs

duty=0.5

DS(on)

t_p=10 µs

10 ^-1

Operation in this area

R_{DS(on) max.}

is limited by R

t_p=100 µs

10 ^-2

0.05

R_thJC= 0.39 °C/W

duty = t_on/ T

t_p=1 ms

V_(BR)DSS

T_J≤ 150 °C,

T_C= 25 °C,

Single pulse

10 ^-2

10 ^-3

Single pulse

t_p=10 ms

t_on

10 ^-3

10 ^-1

10 ⁰

10 ¹

10 ²

10 ^-610 ^-510 ^-410 ^-310 ^-210 ^-1

V_DS(V)

t_p(s)

Figure 3. Typical output characteristics

Figure 4. Typical transfer characteristics

GADG210420210932OCH

GADG210420210933TCH

I_D

(A)

I_D

(A)

V_GS= 10 V

100

V_DS= 20 V

V_DS(V)

V_GS(V)

Figure 5. Typical drain-source on-resistance

Figure 6. Typical gate charge characteristics

V_DS

(V)

GADG210420210935RID

GADG060820211149QVG

R_DS(on)

(mΩ)

V_GS

(V)

_D= 37 A

V_DD= 520 V,

Q_g

600

500

400

300

200

V_GS= 10 V

V_GS

Q_gs

Q_gd

100

V_DS

I_D(A)

Q_g(nC)

DS13715 - Rev 2

page 5/12

1 2 3 456 7 8...12

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