Datasheet > STWA12N120K5

STWA12N120K5

更新时间： 2024-09-29 14:57:43

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意法半导体 - STMICROELECTRONICS		/
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描述
N沟道1200 V、0.62 Ohm典型值、12 A MDmesh K5功率MOSFET，TO-247长引线封装

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STWA12N120K5 数据手册

STH12N120K5-2, STP12N120K5,

STW12N120K5, STWA12N120K5

N-channel 1200 V, 0.62 Ω typ.,12 A MDmesh K5 Power MOSFETs

in H²PAK-2, TO-220, TO-247 and TO-247 long leads

Datasheet - production data

Features

Order codes

STH12N120K5-2

STP12N120K5

STW12N120K5

STWA12N120K5

V_DSR_DS(on)max. I_D

P_TOT

TO-220

PAK-2

1200 V

0.69 Ω

12 A 250 W



Worldwide best FOM (figure of merit)

Ultra-low gate charge

100% avalanche tested

Zener-protected

TO-247

TO-247 long leads

Figure 1: Internal schematic diagram

Applications

D(TAB)

D(2, TAB)



Switching applications

Description

These very high voltage N-channel Power

MOSFETs are designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

G(1)

S(2, 3)

S(3)

(H²PAK-2)

( TO-220,TO-247 and

TO-247 long leads)

Table 1: Device summary

Order code

Marking

Package

H²PAK-2

Packing

STH12N120K5-2

STP12N120K5

STW12N120K5

STWA12N120K5

Tape and reel

TO-220

12N120K5

TO-247

Tube

TO-247 long leads

April 2015

DocID022133 Rev 4

1/21

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...21

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