Datasheet > STW9N150

STW9N150

更新时间： 2024-02-06 13:31:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
9页	151K
描述
N-channel 1500V - 2.2ヘ - 8A - TO-247 Very high voltage PowerMESH⑩ Power MOSFET

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STW9N150 数据手册

STW9N150

N-channel 1500V - 2.2Ω - 8A - TO-247

Very high voltage PowerMESH™ Power MOSFET

TARGET SPECIFICATION

General features

Type

V_DSS

R_DS(on)

I_D

STW9N150

1500V

< 2.7Ω

350W

■ 100% avalanche tested

■ Avalanche ruggedness

■ Gate charge minimized

■ Very low intrinsic capacitances

■ High speed switching

TO-247

■ Very low on-resistance

Description

Using the well consolidated high voltage MESH

OVERLAY™ process, STMicroelectronics has

designed an advanced family of Power MOSFETs

with outstanding performances. The strengthened

layout coupled with the Company’s proprietary

edge termination structure, gives the lowest

Internal schematic diagram

per area, unrivalled gate charge and

DS(on)

switching characteristics.

Applications

■ Switching application

Order code

Part number

Marking

Package

Packaging

STW9N150

W9N150V

TO-247

Tube

May 2007

Rev 1

1/9

This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.

www.st.com

12 3 4 5 6 7...9

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