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STW8NB90 PDF预览

STW8NB90

更新时间: 2024-11-28 22:14:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
9页 314K
描述
N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh⑩ MOSFET

STW8NB90 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-247包装说明:TO-247, 3 PIN
针数:3Reach Compliance Code:not_compliant
风险等级:5.68雪崩能效等级(Eas):700 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:900 V最大漏极电流 (Abs) (ID):8 A
最大漏极电流 (ID):8 A最大漏源导通电阻:1.45 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):190 W
最大脉冲漏极电流 (IDM):32 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STW8NB90 数据手册

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STW8NB90  
STH8NB90FI  
N-CHANNEL 900V - 1.1 - 8 A TO-247/ISOWATT218  
PowerMesh™ MOSFET  
TYPE  
STW8NB90  
STH8NB90FI  
V
R
I
D
DSS  
DS(on)  
900 V  
900 V  
< 1.45 Ω  
< 1.45 Ω  
8 A  
5 A  
TYPICAL R (on) = 1.1 Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
3
3
2
2
1
1
TO-247  
ISOWATT218  
DESCRIPTION  
Using the latest high voltage MESH OVERLAY™  
process, STMicroelectronics has designed an ad-  
vanced family of power MOSFETs with outstanding  
performances. The new patent pending strip layout  
coupled with the Company’s proprieraty edge termi-  
INTERNAL SCHEMATIC DIAGRAM  
nation structure, gives the lowest R  
per area,  
DS(on)  
exceptional avalanche and dv/dt capabilities and  
unrivalled gate charge and switching characteris-  
tics.  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STW8NB90  
STH8NB90FI  
V
Drain-source Voltage (V = 0)  
900  
900  
±30  
V
V
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
DGR  
GS  
V
GS  
Gate- source Voltage  
V
I
Drain Current (continuos) at T = 25°C  
8
5
5
3
A
D
C
I
Drain Current (continuos) at T = 100°C  
A
D
C
I
( )  
Drain Current (pulsed)  
32  
200  
1.6  
20  
80  
0.64  
A
DM  
P
Total Dissipation at T = 25°C  
W
TOT  
C
Derating Factor  
W/°C  
V/ns  
V
dv/dt (1)  
Peak Diode Recovery voltage slope  
Insulation Withstand Voltage (DC)  
Storage Temperature  
4
V
-
2500  
ISO  
T
–65 to 150  
150  
°C  
°C  
stg  
T
Max. Operating Junction Temperature  
j
(•)Pulse width limited by safe operating area  
(1)I 8 A, di/dt 200A/µs, V V  
, T T  
(BR)DSS j JMAX.  
SD  
DD  
July 2001  
1/9  

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