5秒后页面跳转
STW16NK60Z PDF预览

STW16NK60Z

更新时间: 2024-11-23 22:42:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
11页 288K
描述
N-CHANNEL 600V - 0.38з - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH⑩ MOSFET

STW16NK60Z 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-247包装说明:ROHS COMPLIANT PACKAGE-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.82
Is Samacsys:N雪崩能效等级(Eas):360 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:620 V
最大漏极电流 (Abs) (ID):14 A最大漏极电流 (ID):14 A
最大漏源导通电阻:0.42 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):190 W最大脉冲漏极电流 (IDM):56 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STW16NK60Z 数据手册

 浏览型号STW16NK60Z的Datasheet PDF文件第2页浏览型号STW16NK60Z的Datasheet PDF文件第3页浏览型号STW16NK60Z的Datasheet PDF文件第4页浏览型号STW16NK60Z的Datasheet PDF文件第5页浏览型号STW16NK60Z的Datasheet PDF文件第6页浏览型号STW16NK60Z的Datasheet PDF文件第7页 
STP16NK60Z - STB16NK60Z-S  
STW16NK60Z  
N-CHANNEL 600V - 0.38- 14A TO-220 / I2SPAK / TO-247  
Zener-Protected SuperMESH™ MOSFET  
TYPE  
V
R
I
D
Pw  
DSS  
DS(on)  
STP16NK60Z  
STB16NK60Z-S  
STW16NK60Z  
600 V < 0.42 14 A  
600 V < 0.42 14 A  
600 V < 0.42 14 A  
190 W  
190 W  
190 W  
3
2
1
3
TYPICAL R (on) = 0.38 Ω  
DS  
2
1
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
GATE CHARGE MINIMIZED  
VERY LOW INTRINSIC CAPACITANCES  
VERY GOOD MANUFACTURING  
REPEATIBILITY  
2
I SPAK  
TO-220  
3
2
1
TO-247  
DESCRIPTION  
The SuperMESH™ series is obtained through an  
extreme optimization of ST’s well established strip-  
based PowerMESH™ layout. In addition to pushing  
on-resistance significantly down, special care is tak-  
en to ensure a very good dv/dt capability for the  
most demanding applications. Such series comple-  
ments ST full range of high voltage MOSFETs in-  
cluding revolutionary MDmesh™ products.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
IDEAL FOR OFF-LINE POWER SUPPLIES  
ORDER CODE  
PART NUMBER  
MARKING  
P16NK60Z  
B16NK60Z  
PACKAGE  
PACKAGING  
TUBE  
STP16NK60Z  
STB16NK60Z-S  
STW16NK60Z  
TO-220  
2
TUBE  
I SPAK  
W16NK60Z  
TO-247  
TUBE  
March 2004  
1/11  

STW16NK60Z 替代型号

型号 品牌 替代类型 描述 数据表
STW13NK100Z STMICROELECTRONICS

类似代替

N-CHANNEL 1000V - 0.56 OHM - 13A TO-247 Zener-Protected SuperMESH Power MOSFET
STW20NK50Z STMICROELECTRONICS

类似代替

N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247
STW12NK90Z STMICROELECTRONICS

类似代替

N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET

与STW16NK60Z相关器件

型号 品牌 获取价格 描述 数据表
STW16NM50N STMICROELECTRONICS

获取价格

N-channel 500 V - 0.21 ヘ - 15 A MDmesh⑩ II Po
STW18N60DM2 STMICROELECTRONICS

获取价格

N沟道600 V、0.260 Ohm典型值、12 A MDmesh DM2功率MOSFET
STW18N60M2 STMICROELECTRONICS

获取价格

N沟道600 V、0.255 Ohm典型值、13 A MDmesh M2功率MOSFET,
STW18N65M5 STMICROELECTRONICS

获取价格

N沟道650 V、0.198 Ohm典型值、15 A MDmesh M5功率MOSFET,
STW18NB40 STMICROELECTRONICS

获取价格

N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET
STW18NB40FI STMICROELECTRONICS

获取价格

N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET
STW18NK60Z STMICROELECTRONICS

获取价格

N-CHANNEL 600V - 0.27з - 16A TO-247 Zener-Pro
STW18NK80Z STMICROELECTRONICS

获取价格

N-CHANNEL 800V - 0.34W - 19A TO-247 Zener-Pro
STW18NK80Z_06 STMICROELECTRONICS

获取价格

N-channel 800V - 0.34ヘ - 19A - TO-247 Zener-p
STW18NM60N STMICROELECTRONICS

获取价格

N-channel 600 V, 13 A, TO-220, TO-220FP, TO-247, D2PAK second generation MDmesh™ Pow