STU1030PL

更新时间： 2024-10-02 03:30:47

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管
页数	文件大小	规格书
8页	875K
描述
P-Channel E nhancement Mode MOSFET

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数据手册

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STU1030PL 数据手册

S TU/D1030P L

S amHop Microelectronics C orp.

P reliminary May.28 2004

P -C hannel E nhancement Mode MOS FE T

FE ATUR E S

PR ODUCT S UMMAR Y

R DS (ON) ( m

Ω

) Max

VDS S

S uper high dense cell design for low R DS (ON).

R ugged and reliable.

55 @ VG S = -10V

85 @ VG S = -4.5V

-18A

-30V

TO-252 and TO-251 P ackage.

S DU S E R IE S

TO-252AA(D-P AK)

S DD S E R IE S

TO-251(l-P AK)

ABS OLUTE MAXIMUM R ATING S (T

=25 C unless otherwise noted)

P arameter

Limit

Unit

S ymbol

Drain-S ource Voltage

G S

G ate-S ource Voltage

Drain C urrent-C ontinuous ^a@ T

-P ulsed ^b

=125 C

Drain-S ource Diode Forward C urrent ^a

Maximum P ower Dissipation ^a

Operating J unction and S torage

Temperature R ange

, TS TG

-55 to 175

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, J unction-to-C ase

C/W

J C

J A

Thermal R esistance, J unction-to-Ambient

12 3 4 5 6 7 8

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