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STU11NM60ND PDF预览

STU11NM60ND

更新时间: 2024-10-02 06:14:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
18页 531K
描述
N-channel 600V - 0.37Ω - 10A - FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

STU11NM60ND 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-251
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83Is Samacsys:N
雪崩能效等级(Eas):200 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):10 A
最大漏极电流 (ID):10 A最大漏源导通电阻:0.45 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-251
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):90 W最大脉冲漏极电流 (IDM):40 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STU11NM60ND 数据手册

 浏览型号STU11NM60ND的Datasheet PDF文件第2页浏览型号STU11NM60ND的Datasheet PDF文件第3页浏览型号STU11NM60ND的Datasheet PDF文件第4页浏览型号STU11NM60ND的Datasheet PDF文件第5页浏览型号STU11NM60ND的Datasheet PDF文件第6页浏览型号STU11NM60ND的Datasheet PDF文件第7页 
STD11NM60ND, STF/I11NM60ND  
STP11NM60ND, STU11NM60ND  
N-channel 600V - 0.37- 10A - FDmesh™ II Power MOSFET  
I2PAK, TO-220, TO-220FP, IPAK, DPAK  
Features  
Type  
VDSS (@Tjmax)RDS(on) max  
ID  
3
3
2
STD11NM60ND  
STF11NM60ND  
STI11NM60ND  
STP11NM60ND  
STU11NM60ND  
650 V  
650 V  
650 V  
650 V  
650 V  
< 0.45 Ω  
10 A  
1
1
< 0.45 10 A(1)  
DPAK  
PAK  
< 0.45 Ω  
< 0.45 Ω  
< 0.45 Ω  
10 A  
10 A  
10 A  
3
2
1
IPAK  
1. Limited only by maximum temperature allowed  
3
3
2
2
The worldwide best R  
* area amongst the  
1
1
DS(on)  
fast recovery diode devices  
TO-220FP  
TO-220  
100% avalanche tested  
Low input capacitance and gate charge  
Low gate input resistance  
Extremely high dv/dt and avalanche  
capabilities  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
The FDmesh™ II series belongs to the second  
generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company's strip layout  
and associates all advantages of reduced on-  
resistance and fast switching with an intrinsic fast-  
recovery body diode.It is therefore strongly  
recommended for bridge topologies, in particular  
ZVS phase-shift converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
DPAK  
Packaging  
STD11NM60ND  
STF11NM60ND  
STI11NM60ND  
STP11NM60ND  
STU11NM60ND  
11NM60ND  
11NM60ND  
11NM60ND  
11NM60ND  
11NM60ND  
Tape and reel  
Tube  
TO-220FP  
I2PAK  
Tube  
TO-220  
IPAK  
Tube  
Tube  
April 2008  
Rev 1  
1/18  
www.st.com  
18  

STU11NM60ND 替代型号

型号 品牌 替代类型 描述 数据表
STD11NM60ND STMICROELECTRONICS

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N-CHANNEL 600V - 0.40ohm - 11A TO-220 / TO-220FP/I2PAK FDmesh?Power MOSFET with FAST DIODE

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