Datasheet > STU11N65M2

STU11N65M2

更新时间： 2024-10-03 14:58:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
27页	757K
描述
N沟道650 V、0.60 Ohm典型值、7 A MDmesh M2功率MOSFET，IPAK封装

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中文翻译

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技术参数
数据手册

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STU11N65M2 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	1.71
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STU11N65M2 数据手册

STD11N65M2, STP11N65M2, STU11N65M2

Datasheet

N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2

Power MOSFET in DPAK, TO-220 and IPAK packages

Features

TAB

max.

TOT

Order code

STD11N65M2

STP11N65M2

STU11N65M2

Package

DPAK

DS(on)

DPAK

TO-220

TAB

650 V

0.68 Ω

7 A

85 W

TO-220

IPAK

•

Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

D(2, TAB)

Zener-protected

Applications

G(1)

•

Switching applications

Description

S(3)

These devices are N-channel Power MOSFETs developed using the MDmesh M2

technology. Thanks to their strip layout and improved vertical structure, these devices

exhibit low on-resistance and optimized switching characteristics, rendering them

suitable for the most demanding high-efficiency converters.

NG1D2TS3Z

Product status link

STD11N65M2

STP11N65M2

STU11N65M2

DS10348 - Rev 6 - June 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...27

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