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STPS80H100TV PDF预览

STPS80H100TV

更新时间: 2024-02-10 05:51:20
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管高压局域网高电压电源
页数 文件大小 规格书
4页 53K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STPS80H100TV 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:ISOTOP包装说明:PLASTIC, ISOTOP-4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:31 weeks风险等级:2.04
Is Samacsys:N其他特性:LOW NOISE
应用:HIGH VOLTAGE POWER外壳连接:ISOLATED
配置:SEPARATE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.89 V
JESD-30 代码:R-PUFM-X4JESD-609代码:e4
最大非重复峰值正向电流:700 A元件数量:2
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:40 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向电流:20 µA
反向测试电压:100 V子类别:Other Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STPS80H100TV 数据手册

 浏览型号STPS80H100TV的Datasheet PDF文件第2页浏览型号STPS80H100TV的Datasheet PDF文件第3页浏览型号STPS80H100TV的Datasheet PDF文件第4页 
STPS80H100TV  
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
2 x 40 A  
100 V  
K2  
K1  
A2  
A1  
Tj (max)  
VF (max)  
150 °C  
0.65 V  
FEATURES AND BENEFITS  
NEGLIGIBLESWITCHING LOSSES  
HIGHJUNCTION TEMPERATURE CAPABILITY  
LOW LEAKAGECURRENT  
GOODTRADE OFF BETWEEN LEAKAGECUR-  
RENT AND FORWARD VOLTAGE DROP  
AVALANCHERATED  
LOW INDUCTANCE PACKAGE  
INSULATEDPACKAGE:  
Insulatedvoltage = 2500V(RMS)  
Capacitance= 45 pF  
ISOTOPTM  
DESCRIPTION  
High voltage dual Schottky barrier rectifier  
designed for high frequency telecom and  
computer Switched Mode Power Supplies  
and other power converters.  
Packaged in ISOTOP, this device is intended for  
use in medium voltage operation, and particu-  
larly, in high frequency circuitries where low  
switching losses and low noise are required.  
ABSOLUTE RATINGS  
Symbol  
(limiting values, per diode)  
Parameter  
Value  
100  
Unit  
V
VRRM  
Repetitivepeak reverse voltage  
IF(RMS) RMS forward current  
125  
A
IF(AV)  
Average forward current  
Tc = 120°C  
δ = 0.5  
Per diode  
Per device  
40  
80  
A
IFSM  
IRRM  
IRSM  
Tstg  
Surge non repetitiveforward current tp = 10 ms sinusoidal  
700  
A
A
A
µ
Repetitivepeak reverse current  
tp = 2 s square F = 1kHz  
2
5
Non repetitive peak reverse current tp = 100 µs square  
Storage temperaturerange  
°
-55 to+150  
150  
C
Tj  
Maximum operating junctiontemperature *  
Critical rate of rise of reverse voltage  
°C  
dV/dt  
10000  
V/µs  
dPtot  
dTj  
1
* :  
<
thermal runawayconditionfor a diode on its own heatsink  
Rth(ja)  
July 1999 - Ed: 3A  
1/4  

STPS80H100TV 替代型号

型号 品牌 替代类型 描述 数据表
63CNQ080 SENSITRON

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