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STPS8L30DEE-TR PDF预览

STPS8L30DEE-TR

更新时间: 2024-09-26 13:14:07
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意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
7页 115K
描述
30 V, 8 A PowerFLAT Signal Schottky Diode

STPS8L30DEE-TR 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:6 weeks风险等级:1.71
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:346792Samacsys Pin Count:3
Samacsys Part Category:Schottky DiodeSamacsys Package Category:Other
Samacsys Footprint Name:PowerFLAT? (3.3 x 3.3)Samacsys Released Date:2018-06-24 22:22:02
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:FAST RECOVERY POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.57 V
JESD-30 代码:R-PDSO-F3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大重复峰值反向电压:30 V最大反向电流:1000 µA
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

STPS8L30DEE-TR 数据手册

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STPS8L30  
Low drop power Schottky rectifier  
Main product characteristics  
IF(AV)  
VRRM  
Tj  
8 A  
K
K
30 V  
150° C  
0.40 V  
A
VF(max)  
A
NC  
K
NC  
Features and benefits  
Low cost device with low drop forward voltage  
for less power dissipation and reduced  
heatsink  
DPAK  
STPS8L30B  
IPAK  
STPS8L30H  
Optimized conduction/reverse losses trade-off  
which leads to the highest yield in the  
application  
Order codes  
High power surface mount miniature package  
Avalanche capability specified  
Part Numbers  
Marking  
STPS8L30B  
STPS8L30B-TR  
STPS8L30H  
LS30  
LS30  
Description  
Single Schottky rectifier suited to Switched Mode  
Power Supplies and high frequency DC to DC  
converters.  
STPS8L30H  
Packaged in DPAK and IPAK, this device is  
especially intended for use as a Rectifier at the  
secondary of 3.3 V SMPS or DC/DC units.  
wheeling and polarity protection applications.  
Table 1.  
Symbol  
Absolute Ratings (limiting values)  
Parameter  
Value  
Unit  
VRRM  
IF(RMS)  
IF(AV)  
IFSM  
IRRM  
IRSM  
PARM  
Tstg  
Repetitive peak reverse voltage  
RMS forward voltage  
30  
7
V
A
Average forward current  
Tc = 135° C δ = 0.5  
tp = 10 ms sinusoidal  
tp = 2 µs F = 1 kHz square  
tp = 100 µs square  
8
A
Surge non repetitive forward current  
Peak repetitive reverse current  
Non repetitive peak reverse current  
Repetitive peak avalanche power  
Storage temperature range  
75  
1
A
A
2
A
tp = 1 µs Tj = 25° C  
3000  
W
°C  
°C  
V/µs  
-65 to + 150  
Tj  
Maximum operating junction temperature (1)  
150  
dV/dt  
Critical rate of rise of reverse voltage  
10000  
dPtot  
dTj  
1
1. --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink  
Rth(j a)  
March 2006  
Rev 4  
1/7  
www.st.com  
7

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