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STPS8H100R PDF预览

STPS8H100R

更新时间: 2024-11-01 03:33:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 高压高电压电源
页数 文件大小 规格书
8页 136K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STPS8H100R 技术参数

生命周期:Obsolete包装说明:PLASTIC, I2PAK-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.76其他特性:LOW LEAKAGE CURRENT
应用:HIGH VOLTAGE POWER配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.58 VJESD-30 代码:R-PSIP-T3
最大非重复峰值正向电流:250 A元件数量:1
相数:1端子数量:3
最高工作温度:175 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

STPS8H100R 数据手册

 浏览型号STPS8H100R的Datasheet PDF文件第2页浏览型号STPS8H100R的Datasheet PDF文件第3页浏览型号STPS8H100R的Datasheet PDF文件第4页浏览型号STPS8H100R的Datasheet PDF文件第5页浏览型号STPS8H100R的Datasheet PDF文件第6页浏览型号STPS8H100R的Datasheet PDF文件第7页 
STPS8H100D/F/G/R/FP  
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
8 A  
100 V  
175 °C  
0.58 V  
Tj (max)  
VF (max)  
A
A
K
K
TO-220AC  
STPS8H100D  
ISOWATT220AC  
STPS8H100F  
FEATURES AND BENEFITS  
Negligible switching losses  
High junction temperature capability  
Low leakage current  
Good trade off between leakage current and  
forward voltage drop  
K
A
NC  
D2PAK  
Insulated package: ISOWATT220AC, TO-220FPAC  
Insulating voltage = 2000V DC  
Capacitance = 12pF  
STPS8  
DESCRIPTION  
Schottky barrier rectifier designed for high fre-  
quency compact Switched Mode Power Sup-  
plies such as adaptators and on board DC/DC  
converters.  
A
K
A
NC  
I2PAK  
STPS8H100R  
K
TO-220FPAC  
STPS8H100FP  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
100  
30  
Unit  
V
VRRM  
IF(RMS) RMS forward current  
A
IF(AV)  
Average forward current  
δ = 0.5  
TO-220AC /  
I2PAK / D2PAK  
Tc= 165°C  
8
A
ISOWATT220AC Tc = 150°C  
TO-220FPAC  
IFSM  
Surge non repetitive forward cur-  
rent  
tp = 10 ms sinusoidal  
250  
A
IRRM  
IRSM  
Tstg  
Repetitive peak reverse current  
tp = 2 µs F = 1kHz square  
1
3
A
A
Non repetitive peak reverse current tp = 100 µs square  
Storage temperature range  
- 65 to + 175  
175  
°C  
Tj  
Maximum operating junction temperature  
Critical rate of rise of rise voltage  
°C  
dV/dt  
10000  
V/µs  
January 2002 - Ed: 5D  
1/8  

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