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STPS8L30B PDF预览

STPS8L30B

更新时间: 2024-01-23 13:44:30
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
4页 53K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

STPS8L30B 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, IPAK-3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.72
应用:POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.63 V
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
最大非重复峰值正向电流:75 A元件数量:1
相数:1端子数量:3
最高工作温度:150 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STPS8L30B 数据手册

 浏览型号STPS8L30B的Datasheet PDF文件第2页浏览型号STPS8L30B的Datasheet PDF文件第3页浏览型号STPS8L30B的Datasheet PDF文件第4页 
STPS8L30B  
LOW DROP POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
2
4
(TAB)  
3
IF(AV)  
VRRM  
8 A  
30 V  
4
Tj (max)  
VF (max)  
150 °C  
0.40 V  
2
3
FEATURES AND BENEFITS  
1
NC  
LOW COST DEVICE WITH LOW DROP FOR-  
WARD VOLTAGE FOR LESS POWER  
DISSIPATION AND REDUCED HEATSINK  
DPAK  
OPTIMIZED CONDUCTION/REVERSE LOSSES  
TRADE-OFFWHICH LEADS TOTHE HIGHEST  
YIELD IN THE APPLICATIONS  
HIGH POWER SURFACE MOUNT MINIATURE  
PACKAGE  
DESCRIPTION  
Single Schottky rectifier suited to Switched Mode  
Power Supplies andhigh frequencyDC to DC con-  
verters.  
Packaged in DPAK, this device is especially in-  
tended for use as a Rectifier at the secondary of  
3.3V SMPS or DC/DC units.  
ABSOLUTE RATINGS  
Symbol  
(limiting values)  
Parameter  
Value  
Unit  
V
VRRM  
Repetitivepeak reverse voltage  
30  
7
IF(RMS) RMS forward current  
A
IF(AV)  
IFSM  
IRRM  
IRSM  
Tstg  
Average forward current  
Tc = 135°C δ = 0.5  
8
A
Surge non repetitiveforward current tp = 10 ms Sinusoidal  
75  
1
A
Repetitivepeak reverse current  
Non repetitive peak reverse current  
Storage temperaturerange  
tp = 2 µs F = 1kHz square  
tp = 100µs square  
A
2
A
- 65 to + 150  
150  
°C  
°
C
Tj  
Maximum junctiontemperature  
Critical rate of rise of reverse voltage  
µ
V/ s  
dV/dt  
10000  
dPtot  
dTj  
1
* :  
<
thermal runawaycondition for a diode on its own heatsink  
Rth(ja)  
October 1998 - Ed: 4A  
1/4  

STPS8L30B 替代型号

型号 品牌 替代类型 描述 数据表
STPS8L30B-TR STMICROELECTRONICS

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