Datasheet > STPS8H100D_02

STPS8H100D_02

更新时间： 2024-11-01 03:11:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		高压高电压电源
页数	文件大小	规格书
8页	136K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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中文翻译

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数据手册

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STPS8H100D_02 数据手册

STPS8H100D/F/G/R/FP

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

8 A

100 V

175 °C

0.58 V

Tj (max)

V_F(max)

TO-220AC

STPS8H100D

ISOWATT220AC

STPS8H100F

FEATURES AND BENEFITS

■

Negligible switching losses

High junction temperature capability

Low leakage current

Good trade off between leakage current and

forward voltage drop

D²PAK

■

Insulated package: ISOWATT220AC, TO-220FPAC

Insulating voltage = 2000V DC

Capacitance = 12pF

STPS8

DESCRIPTION

Schottky barrier rectifier designed for high fre-

quency compact Switched Mode Power Sup-

plies such as adaptators and on board DC/DC

converters.

I²PAK

STPS8H100R

TO-220FPAC

STPS8H100FP

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Repetitive peak reverse voltage

Value

100

Unit

V_RRM

I_F(RMS)RMS forward current

I_F(AV)

Average forward current

δ = 0.5

TO-220AC /

I²PAK / D²PAK

Tc= 165°C

ISOWATT220AC Tc = 150°C

TO-220FPAC

I_FSM

Surge non repetitive forward cur-

rent

tp = 10 ms sinusoidal

250

I_RRM

I_RSM

T_stg

Repetitive peak reverse current

tp = 2 µs F = 1kHz square

Non repetitive peak reverse current tp = 100 µs square

Storage temperature range

- 65 to + 175

175

°C

Maximum operating junction temperature

Critical rate of rise of rise voltage

°C

dV/dt

10000

V/µs

January 2002 - Ed: 5D

1/8

12 3 4 5 6 7 8

中文翻译

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